University of Southern California

Export 11 results:
2012
Hooten, N. C., L. D. Edmonds, W. G. Bennett, J. R. Ahlbin, N. A. Dodds, R. A. Reed, R. D. Schrimpf, and R. A. Weller, "The Significance of High-Level Carrier Generation Conditions for Charge Collection in Irradiated Devices", Nuclear Science, IEEE Transactions on, vol. 59, no. 6, pp. 2710 -2721, dec., 2012.
2011
Gadlage, M. J., J. R. Ahlbin, B. L. Bhuva, N. C. Hooten, N. A. Dodds, R. A. Reed, L. W. Massengill, R. D. Schrimpf, and G. Vizkelethy, "Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology", Nuclear Science, IEEE Transactions on, vol. 58, no. 3, pp. 1093 -1097, june, 2011.
Artola, L., G. Hubert, K. M. Warren, M. Gaillardin, R. D. Schrimpf, R. A. Reed, R. A. Weller, J. R. Ahlbin, P. Paillet, M. Raine, et al., "SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node", Nuclear Science, IEEE Transactions on, vol. 58, no. 3, pp. 1338 -1346, june, 2011.
2010
Ahlbin, J. R., M. J. Gadlage, D. R. Ball, A. W. Witulski, B. L. Bhuva, R. A. Reed, G. Vizkelethy, and L. W. Massengill, "The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process", Nuclear Science, IEEE Transactions on, vol. 57, no. 6, pp. 3380 -3385, dec., 2010.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, B. L. Bhuva, L. W. Massengill, R. A. Reed, R. D. Schrimpf, and G. Vizkelethy, "Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes", Nuclear Science, IEEE Transactions on, vol. 57, no. 6, pp. 3336 -3341, dec., 2010.
2009
Amusan, O. A., L. W. Massengill, M. P. Baze, B. L. Bhuva, A. F. Witulski, J. D. Black, A. Balasubramanian, M. C. Casey, D. A. Black, J. R. Ahlbin, et al., "Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process", Device and Materials Reliability, IEEE Transactions on, vol. 9, no. 2, pp. 311 -317, june, 2009.
Ramachandran, V., M. J. Gadlage, J. R. Ahlbin, M. L. Alles, R. A. Reed, B. L. Bhuva, L. W. Massengill, J. D. Black, and C. N. Foster, "Application of a novel test system to characterize single-event transients at cryogenic temperatures", Semiconductor Device Research Symposium, 2009. ISDRS '09. International, pp. 1 -2, dec., 2009.
Gadlage, M. J., J. R. Ahlbin, V. Ramachandran, P. Gouker, C. A. Dinkins, B. L. Bhuva, B. Narasimham, R. D. Schrimpf, M. W. McCurdy, M. L. Alles, et al., "Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies", Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3115 -3121, dec., 2009.
2008
Ahlbin, J. R., J. D. Black, L. W. Massengill, O. A. Amusan, A. Balasubramanian, M. C. Casey, D. A. Black, M. W. McCurdy, R. A. Reed, and B. L. Bhuva, "C-CREST Technique for Combinational Logic SET Testing", Nuclear Science, IEEE Transactions on, vol. 55, no. 6, pp. 3347 -3351, dec., 2008.
Amusan, O. A., L. W. Massengill, M. P. Baze, B. L. Bhuva, A. F. Witulski, J. D. Black, A. Balasubramanian, M. C. Casey, D. A. Black, J. R. Ahlbin, et al., "Mitigation techniques for single event induced charge sharing in a 90 nm bulk CMOS process", Reliability Physics Symposium, 2008. IRPS 2008. IEEE International, pp. 468 -472, 27 2008-may 1.
2007
Dasgupta, S., A. F. Witulski, B. L. Bhuva, M. L. Alles, R. A. Reed, O. A. Amusan, J. R. Ahlbin, R. D. Schrimpf, and L. W. Massengill, "Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS", Nuclear Science, IEEE Transactions on, vol. 54, no. 6, pp. 2407 -2412, dec., 2007.