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"Characterization of Single-Event Transients Of Body-Tied vs. floating-body circuits in 150 nm 3D SOI",
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"Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths",
Device and Materials Reliability, IEEE Transactions on, vol. 11, no. 3, pp. 401 -406, sept., 2011.
Atkinson, N. M., A. F. Witulski, W. T. Holman, J. R. Ahlbin, B. L. Bhuva, and L. W. Massengill,
"Layout Technique for Single-Event Transient Mitigation via Pulse Quenching",
Nuclear Science, IEEE Transactions on, vol. 58, no. 3, pp. 885 -890, june, 2011.
Atkinson, N. M., J. R. Ahlbin, A. F. Witulski, N. J. Gaspard, W. T. Holman, B. L. Bhuva, E. X. Zhang, L. Chen, and L. W. Massengill,
"Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS",
Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2578 -2584, dec., 2011.
Gaspard, N. J., A. F. Witulski, N. M. Atkinson, J. R. Ahlbin, W. T. Holman, B. L. Bhuva, T. D. Loveless, and L. W. Massengill,
"Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOS",
Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2614 -2620, dec., 2011.