University of Southern California

Publications

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A
Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS TechnologyGadlage, M.J., Ahlbin, J.R., Bhuva, B.L., Hooten, N.C., Dodds, N.A., Reed, R.A., Massengill, L.W., Schrimpf, R.D., Vizkelethy, G.
In Nuclear Science, IEEE Transactions on
2011, 1093 -1097 pagesBibTex
Analysis of soft error rates in combinational and sequential logic and implications of hardening for advanced technologiesMahatme, N.N., Chatterjee, I., Bhuva, B.L., Ahlbin, J., Massengill, L.W., Shuler, R.
In Reliability Physics Symposium (IRPS), 2010 IEEE International
2010, 1031 -1035 pagesBibTex
Application of a novel test system to characterize single-event transients at cryogenic temperaturesRamachandran, V., Gadlage, M.J., Ahlbin, J.R., Alles, M.L., Reed, R.A., Bhuva, B.L., Massengill, L.W., Black, J.D., Foster, C.N.
In Semiconductor Device Research Symposium, 2009. ISDRS '09. International
2009, 1 -2 pagesBibTex
C
C-CREST Technique for Combinational Logic SET TestingAhlbin, J.R., Black, J.D., Massengill, L.W., Amusan, O.A., Balasubramanian, A., Casey, M.C., Black, D.A., McCurdy, M.W., Reed, R.A., Bhuva, B.L.
In Nuclear Science, IEEE Transactions on
2008, 3347 -3351 pagesBibTex
Characterization of Single-Event Transients Of Body-Tied vs. floating-body circuits in 150 nm 3D SOIGaspard, N.J., Ahlbin, J.R., Gouker, P.M., Atkinson, N.M., Gadlage, M.J., Witulski, A.F., Holman, W.T., Bhuva, B.L., Zhang, E.X., Massengill, L.W.
In Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
2011, 252 -255 pagesBibTex
D
Design Techniques to Reduce SET Pulse Widths in Deep-Submicron Combinational LogicAmusan, O.A., Massengill, L.W., Bhuva, B.L., Dasgupta, S., Witulski, A.F., Ahlbin, J.R.
In Nuclear Science, IEEE Transactions on
2007, 2060 -2064 pagesBibTex
Double-pulse-single-event transients in combinational logicAhlbin, J.R., Loveless, T.D., Ball, D.R., Bhuva, B.L., Witulski, A.F., Massengill, L.W., Gadlage, M.J.
In Reliability Physics Symposium (IRPS), 2011 IEEE International
2011, 3C.5.1 -3C.5.6 pagesBibTex
E
Effect of multiple-transistor charge collection on SET pulse widthsAhlbin, J.R., Gadlage, M.J., Atkinson, N.M., Bhuva, B.L., Witulski, A.F., Holman, W.T., Massengill, L.W., Eaton, P.H., Narasimham, B.
In Reliability Physics Symposium (IRPS), 2010 IEEE International
2010, 198 -202 pagesBibTex
Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse WidthsAhlbin, J.R., Gadlage, M.J., Atkinson, N.M., Narasimham, B., Bhuva, B.L., Witulski, A.F., Holman, W.T., Eaton, P.H., Massengill, L.W.
In Device and Materials Reliability, IEEE Transactions on
2011, 401 -406 pagesBibTex
Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low PowerCasey, M.C., Armstrong, S.E., Arora, R., King, M.P., Ahlbin, J.R., Francis, S.A., Bhuva, B.L., McMorrow, D., Hughes, H.L., McMarr, P.J., Melinger, J.S., Massengill, L.W.
In Nuclear Science, IEEE Transactions on
2009, 3262 -3266 pagesBibTex
Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOSAtkinson, N.M., Ahlbin, J.R., Witulski, A.F., Gaspard, N.J., Holman, W.T., Bhuva, B.L., Zhang, E.X., Li Chen, Massengill, L.W.
In Nuclear Science, IEEE Transactions on
2011, 2578 -2584 pagesBibTex
Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOSDasgupta, S., Witulski, A.F., Bhuva, B.L., Alles, M.L., Reed, R.A., Amusan, O.A., Ahlbin, J.R., Schrimpf, R.D., Massengill, L.W.
In Nuclear Science, IEEE Transactions on
2007, 2407 -2412 pagesBibTex
I
Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOSGaspard, N.J., Witulski, A.F., Atkinson, N.M., Ahlbin, J.R., Holman, W.T., Bhuva, B.L., Loveless, T.D., Massengill, L.W.
In Nuclear Science, IEEE Transactions on
2011, 2614 -2620 pagesBibTex
Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated TemperaturesGadlage, M.J., Ahlbin, J.R., Narasimham, B., Ramachandran, V., Dinkins, C.A., Pate, N.D., Bhuva, B.L., Schrimpf, R.D., Massengill, L.W., Shuler, R.L., McMorrow, D.
In Device and Materials Reliability, IEEE Transactions on
2010, 157 -163 pagesBibTex
Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOSJagannathan, S., Gadlage, M.J., Bhuva, B.L., Schrimpf, R.D., Narasimham, B., Chetia, J., Ahlbin, J.R., Massengill, L.W.
In Nuclear Science, IEEE Transactions on
2010, 3386 -3391 pagesBibTex
Influence of N-Well Contact Area on the Pulse Width of Single-Event TransientsAhlbin, J.R., Atkinson, N.M., Gadlage, M.J., Gaspard, N.J., Bhuva, B.L., Loveless, T.D., Zhang, E.X., Chen, L., Massengill, L.W.
In Nuclear Science, IEEE Transactions on
2011, 2585 -2590 pagesBibTex
L
Layout Technique for Single-Event Transient Mitigation via Pulse QuenchingAtkinson, N.M., Witulski, A.F., Holman, W.T., Ahlbin, J.R., Bhuva, B.L., Massengill, L.W.
In Nuclear Science, IEEE Transactions on
2011, 885 -890 pagesBibTex
M
Mitigation techniques for single event induced charge sharing in a 90 nm bulk CMOS processAmusan, O.A., Massengill, L.W., Baze, M.P., Bhuva, B.L., Witulski, A.F., Black, J.D., Balasubramanian, A., Casey, M.C., Black, D.A., Ahlbin, J.R., Reed, R.A., McCurdy, M.W.
In Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
2008, 468 -472 pagesBibTex
Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS ProcessAmusan, O.A., Massengill, L.W., Baze, M.P., Bhuva, B.L., Witulski, A.F., Black, J.D., Balasubramanian, A., Casey, M.C., Black, D.A., Ahlbin, J.R., Reed, R.A., McCurdy, M.W.
In Device and Materials Reliability, IEEE Transactions on
2009, 311 -317 pagesBibTex
O
On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator TechnologyLoveless, T.D., Kauppila, J. S., Jagannathan, S., Ball, D.R., Rowe, J. D., Gaspard, N.J., Atkinson, N.M., Blaine, R. W., Reece, T. R., Ahlbin, J.R., Haeffner, T. D., Alles, M.L., Holman, W.T., Bhuva, B.L., Massengill, L.W.
In Nuclear Science, IEEE Transactions on
2012, 2748 -2755 pagesBibTex
R
Radiation Effects in 3D Integrated SOI SRAM CircuitsGouker, P.M., Tyrrell, B., D'Onofrio, R., Wyatt, P., Soares, T., Weilin Hu, Chenson Chen, Schwank, J.R., Shaneyfelt, M.R., Blackmore, E.W., Delikat, K., Nelson, M., McMarr, P., Hughes, H., Ahlbin, J.R., Weeden-Wright, S., Schrimpf, R.
In Nuclear Science, IEEE Transactions on
2011, 2845 -2854 pagesBibTex
S
Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS ProcessesGadlage, M.J., Ahlbin, J.R., Narasimham, B., Bhuva, B.L., Massengill, L.W., Reed, R.A., Schrimpf, R.D., Vizkelethy, G.
In Nuclear Science, IEEE Transactions on
2010, 3336 -3341 pagesBibTex
SET Characterization in Logic Circuits Fabricated in a 3DIC TechnologyGouker, P.M., Tyrrell, B., Renzi, M., Chenson Chen, Wyatt, P., Ahlbin, J.R., Weeden-Wright, S., Atkinson, N.M., Gaspard, N.J., Bhuva, B.L., Massengill, L.W., Enxia Zhang, Schrimpf, R., Weller, R.A., King, M.P., Gadlage, M.J.
In Nuclear Science, IEEE Transactions on
2011, 2555 -2562 pagesBibTex
SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology NodeArtola, L., Hubert, G., Warren, K.M., Gaillardin, M., Schrimpf, R.D., Reed, R.A., Weller, R.A., Ahlbin, J.R., Paillet, P., Raine, M., Girard, S., Duzellier, S., Massengill, L.W., Bezerra, F.
In Nuclear Science, IEEE Transactions on
2011, 1338 -1346 pagesBibTex
Single event transient pulse width measurements in a 65-nm bulk CMOS technology at elevated temperaturesGadlage, M.J., Ahlbin, J.R., Bhuva, B.L., Massengill, L.W., Schrimpf, R.D.
In Reliability Physics Symposium (IRPS), 2010 IEEE International
2010, 763 -767 pagesBibTex
Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated TemperaturesGadlage, M.J., Ahlbin, J.R., Narasimham, B., Bhuva, B.L., Massengill, L.W., Schrimpf, R.D.
In Device and Materials Reliability, IEEE Transactions on
2011, 179 -186 pagesBibTex
Single-Event Transient Pulse Quenching in Advanced CMOS Logic CircuitsAhlbin, J.R., Massengill, L.W., Bhuva, B.L., Narasimham, B., Gadlage, M.J., Eaton, P.H.
In Nuclear Science, IEEE Transactions on
2009, 3050 -3056 pagesBibTex
T
Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI TechnologiesGadlage, M.J., Ahlbin, J.R., Ramachandran, V., Gouker, P., Dinkins, C.A., Bhuva, B.L., Narasimham, B., Schrimpf, R.D., McCurdy, M.W., Alles, M.L., Reed, R.A., Mendenhall, M.H., Massengill, L.W., Shuler, R.L., McMorrow, D.
In Nuclear Science, IEEE Transactions on
2009, 3115 -3121 pagesBibTex
The effect of elevated temperature on digital single event transient pulse widths in a bulk CMOS technologyGadlage, M.J., Ahlbin, J.R., Narasimham, B., Ramachandran, V., Dinkins, C.A., Bhuva, B.L., Schrimpf, R.D., Shuler, R.L.
In Reliability Physics Symposium, 2009 IEEE International
2009, 170 -173 pagesBibTex
The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS ProcessAhlbin, J.R., Gadlage, M.J., Ball, D.R., Witulski, A.W., Bhuva, B.L., Reed, R.A., Vizkelethy, G., Massengill, L.W.
In Nuclear Science, IEEE Transactions on
2010, 3380 -3385 pagesBibTex
The Significance of High-Level Carrier Generation Conditions for Charge Collection in Irradiated DevicesHooten, N.C., Edmonds, L. D., Bennett, W. G., Ahlbin, J.R., Dodds, N.A., Reed, R.A., Schrimpf, R.D., Weller, R.A.
In Nuclear Science, IEEE Transactions on
2012, 2710 -2721 pagesBibTex
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