Publications                                                           

Ph.D thesis:

H. Abebe, "Modeling current-voltage characteristics of the MOSFET device with quantum mechanical effects, due to thin oxide near silicon/silicon-oxide interface." UMI Dissertations Publishing, UMI No. 3046790, ISBN No. 0-493-60834-6,Ann Arbor, Ml. USA, (2002). Ph.D thesis, Claremont Graduate University [pdf]

Book:

H. Abebe, Introduction to Applied Modern Physics, Lulu Publishing, Morrisville, NC, USA, First Edition, ISBN:978-1-4357-0521-0, (2007).

Book Chapter:

H. K. Kuiken, Practical Asymptotics, Springer Publishing, New York, NY, USA, pp 25-46, ISBN: 978-0-7923-6920-2, (2001).

Journal papers:

1.    E. Cumberbatch, H. Abebe, and Hedley Morris, "Current-Voltage characteristics from an asymptotic analysis of the MOSFET equations." Journal of Engineering Mathematics, Kluwer Academic Publishers (a part of Springer). Vol. 39,  PP. 25-46, March (2001). [pdf]

2.  H. Abebe, E. Cumberbatch, V. Tyree, and H. Morris, "MOSFET device modeling using methods of asymptotic analysis." Internet Journal ElectronicsLetters.com (a part of Elektrorevue journal), ISSN 1213-161X, May 20, (2003). [HTML]

3. H. Morris, E. Cumberbatch, V. Tyree and H. Abebe, "Analytical results for the I-V characteristics of a fully depleted SOI-MOSFET." IEE Proc. Circuits, Devices & Systems, Vol. 152, Issue 6, P. 630-632, December (2005). [pdf].

4. E. Cumberbatch, H. Abebe and Uno, S, "Nano-Scale MOSFET device modeling with quantum mechanical effects." EJAM, Cambridge University Press, Vol. 17, Issue 04, pp 465-489, August (2006).[Abstract]

5. H. Abebe, V. Tyree, H. Morris and P. T. Vernier, "SPICE BSIM3 model parameter extraction and optimization: Practical consideration." IJEEE, Manchester University Press,Vol. 44, Issue 03, pp 249-262, July (2007).[pdf]

6. H. Abebe,  H. Morris, E. Cumberbatch and V. Tyree, "Compact gate capacitance model with polysilicon depletion effect for MOS device."  IJSTS, Institute of Electronics Engineers of Korea, special issue on NANO/Microsystems Technology, Vol. 7, No. 3, p. 209, Sept. (2007).[pdf]

7. Uno, S, H. Abebe and E. Cumberbatch, "Analytical description of inversion-layer quantum effects using the density gradient model and singular perturbation theory" JJAP, The Japan Society of Applied Physics, Vol. 46, No. 12, pp. 7648-7653, Dec. (2007).[pdf]


Refereed & reviewed conference proceedings:

1.   H. Abebe and E. Cumberbatch, "Quantum mechanical  effects correction models for inversion charge and current-voltage (I-V) characteristics of the MOSFET device." Proceedings  2003 Nanotechnology Conference, Vol 2, pp 218-221, February 23-27, (2003). San Francisco, CA, USA. [pdf](Oral presentation).
2.   H.C. Morris, M De Pass and H. Abebe, "Analytic formulae for the impact ionization rate for use in compactmodels of ultra-short semiconductor devices." Proceedings  2004 Nanotechnology Conference,Vol. 2, pp140-143,  March 7-11, (2004), Boston, Massachusetts, USA. [pdf] (Poster).

3.   H.C. Morris and H. Abebe, "MOSFET analytical substrate current model for circuit simulation." Proceedings  2004 International Conference on Computing, Communications and Control Technologies: CCCT'04, Vol. 1, pp162-165, August 14-17, (2004), Austin, Texas, USA. [pdf](Oral presentation).

4.   H. Abebe and E. Cumberbatch, "Modeling quantum effects on MOSFET channel surface potential."Proceedings  2004 International Conference on Computing, Communications and Control Technologies: CCCT'04, Vol. 7, pp198-201, August 14-17, (2004), Austin, Texas, USA. [pdf ](Oral presentation).

5. H. Abebe, E. Cumberbatch, V. Tyree and H. Morris, "MOSFET Analytical Inversion Charge Model with Quantum Effects Using a Triangular Potential Well Approximation." Proceedings  2005 Nanotechnology Conference, Vol. 3, pp. 64-67, Anaheim, CA, May 8-12, (2005). [pdf] (Poster).

6. E. Cumberbatch, H. Abebe, H. Morris and V. Tyree, "Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS." Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 57-60, Anaheim, CA, May 8-12, (2005). [pdf] (Poster).

7. H. Morris, E. Cumberbatch and H. Abebe, "SOS Gate Capacitance Modeling." Proceedings  2005 Nanotechnology Conference, Vol. 3, pp. 68-71, Anaheim, CA, May 8-12, (2005). [pdf] (Poster).

8. H. Abebe, V. Tyree, E. Cumberbatch and H. Morris, "A Simplified Current-Voltage (I-V) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET." The 9th World Multi-Conference, WMSCI Proceedings, Vol. 6, pp. 211-214, Orlando, FL, July 10-13, (2005). [pdf] (Oral presentation and selected as the best paper in the session).

9. H. Morris, E. Cumberbatch, H. Abebe and V. Tyree, "Analytical Modeling of Impact Ionization and Polysilicon Gate Depletion Effects for Application in Circuit Simulation." The 9th World Multi-Conference, WMSCI Proceedings, Vol. 3, pp. 319-323, Orlando, FL, July 10-13, (2005). [pdf] (Oral presentation).

10. H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, "Analytical models for quantized sub-band energy levels and inversion charge centroid for MOS structures derived from asymptotic and WKB approximations."Proceedings  2006 Nanotechnology Conference, Vol. 3, pp. 519-522, May 7-11, (2006), Boston, Massachusetts, USA. [pdf](Poster)

11. H. Morris, H. Abebe, E. Cumberbatch and Uno, S., "Compact models for double gate and surround gate MOSFETs." Proceedings  2006 Nanotechnology Conference, , Vol. 3, pp. 824-827, May 7-11, (2006), Boston, Massachusetts, USA. [pdf] [slides](Poster)

12. H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, "Numerical and analytical results of the polysilicon gate depletion effect on MOS gate capacitance," IEEE UGIM Proceedings, pp. 111-115, June 25-28, (2006), San Jose, CA.(Oral presentation)

13. H. Morris, E. Cumberbatch, H. Abebe and V. Tyree, "Compact modeling for the I-V characteristics of double gate and surround gate MOSFETs," IEEE UGIM Proceedings, pp. 117-121, June 25-28, (2006),San Jose, CA.(Oral presentation)

14. H. Morris, H. Abebe and E. Cumberbatch, "Compact models for asymmetric double gate  MOSFETs." Proceedings  2007 Nanotechnology Conference,  Vol.3, pp. 649-653, May 20-24, (2007), Santa Clara, California, USA. (Poster)

15. H. Abebe,  H. Morris, E. Cumberbatch and V. Tyree, "Compact models for double gate MOSFET with quantum mechanical effects using Lambert function." Proceedings  2008 Nanotechnology Conference, Vol. 3, pp. 849,  June 1-5, (2008), Boston, Massachusetts, USA.  (Oral presentation)

16. H. Morris, E. Cumberbatch, D. Yong, H. Abebe and V. Tyree,"Density gradient quantum surface potential." Proceedings  2008 Nanotechnology Conference, Vol. 3, pp. 717,  June 1-5, (2008), Boston, Massachusetts, USA. (Poster)

17. H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, "Compact models of the quantized sub-band energy levels for MOSFET device application," IEEE UGIM Proceedings, pp. 58-60, July 13-16, (2008), Louisville, KY .(Oral presentation)

Technical notes and conference abstracts:

1.    Jerome Spanier, Rong Kong, Henok Abebe, Yongzeng Lai, and Diana Verzi, "Adaptive methods for accelerating monte carlo convergence, "Claremont Graduate University and Los Alamos National Laboratory, interim report, January (1997).

2.    Ellis Cumberbatch, Henok Abebe, Maria Nunez, Mariam Nuno, Diana Verzi, Zhiyu Bo, Shomeek Mukhopadhyay, Dina Rojas, and Vance Tyree, "MOSFET device modeling," Claremont Graduate University and USC-ISI MOSIS service, final report, June (1998).

3.    Henok Abebe and Vance Tyree, "BSIM3v3.1 model parameter extraction and optimization." USC-ISI MOSIS Service technical note, October (2000). [pdf]

4.    Henok Abebe and Ellis Cumberbatch, "Modeling quantum effects on current/voltage characteristics of a MOSFET transistor," 4th SoCAMS Symposium, April 24, (2004), Claremont, CA, USA. [pdf] (Oral presentation).

5.  Uno, S., H. Abebe,  and E. Cumberbatch, "Analytical solutions to quantum drift-diffusion equation for quantum mechanical modeling of MOS structures," Solid State Device and Materials, Sep. 12-15, extended abstracts pp. 592-593, Kobe, Japan, (2005). [pdf](Poster).

6. Uno, S, H. Abebe and E. Cumberbatch, "Analytical formulae of quantum-mechanical electron density in inversion layer in planar MOSFETs."  IWCM 2006, p.25, January 24, (2006), Pacifico Yokohama, Yokohama, Japan. [pdf] (Oral presentation).