Publications                                                           

Ph.D thesis:

H. Abebe, "Modeling current-voltage characteristics of the MOSFET device with quantum mechanical effects, due to thin oxide near silicon/silicon-oxide interface." UMI Dissertations Publishing, UMI No. 3046790, ISBN No. 0-493-60834-6,Ann Arbor, Ml. USA, (2002). Ph.D thesis, Claremont Graduate University [pdf]

Book:

H. Abebe, Introduction to Applied Modern Physics, Lulu Publishing, Morrisville, NC, USA, First Edition, ISBN:978-1-4357-0521-0, (2007). 

Book Chapter:

H. K. Kuiken, Practical Asymptotics, Springer Publishing, New York, NY, USA, pp 25-46, ISBN: 978-0-7923-6920-2, (2001).

Journal papers:

1. H. Morris and H. Abebe, “A compact quantum surface potential model for a MOSFET device” Elsevier Journal of Mathematical and Computer Modeling, Special Issue on Scientific Computing in Electronics Engineering, (2010). (In Press, DOI: 10.1016/j.mcm.2009.08.023) [pdf]

2. H. Abebe, E. Cumberbatch, H. Morris, V. Tyree, T. Numata and S. Uno, “Symmetric and asymmetric double gate MOSFET modeling” IJSTS, Institute of Electronics Engineers of Korea, Vol. 9, No. 4, pp. 225-232, Dec. (2009).[pdf]

3. Uno, S, H. Abebe and E. Cumberbatch, "Analytical description of inversion-layer quantum effects using the density gradient model and singular perturbation theory" JJAP, The Japan Society of Applied Physics, Vol. 46, No. 12, pp. 7648-7653, Dec. (2007). [pdf]

4. H. Abebe, H. Morris, E. Cumberbatch and V. Tyree, "Compact gate capacitance model with polysilicon depletion effect for MOS device." IJSTS, Institute of Electronics Engineers of Korea, special issue on NANO/Microsystems Technology, Vol. 7, No. 3, p. 209, Sept.(2007)..[pdf]

5. H. Abebe, V. Tyree, H. Morris and P. T. Vernier, "SPICE BSIM3 model parameter extraction and optimization: Practical consideration." IJEEE, Manchester University Press, Vol. 44, Issue 03, pp 249-262, July (2007).[pdf]

6. E. Cumberbatch, H. Abebe and Uno, S, "Nano-Scale MOSFET device modeling with quantum mechanical effects." EJAM, Cambridge University Press, Vol. 17, Issue 04, pp 465-489, August (2006).[Abstract]

7. H. Morris, E. Cumberbatch, V. Tyree, H. Abebe, “Analytical Results for the I-V Characteristics of a Fully Depleted SOI-MOSFET.” IEE Proc. Circuits, Devices & Systems, Vol. 152, Issue 6, P. 630-632, December (2005). [pdf].

8. H. Abebe, E. Cumberbatch, V. Tyree, and H. Morris, “MOSFET Device Modeling Using Methods of Asymptotic Analysis,” Internet Journal ElecronicsLetters.com ( now a part of Elektrorevue Journal) , ISSN 123-161X, May 20, (2003).[HTML]

9. E. Cumberbatch, H. Abebe and Hedley Morris,”Current-Voltage Characteristics from an Asymptotic Analysis of the MOSFET Equations” Journal of Engineering Mathematics, Kluwer Academic Publishers (now a part of Springer). Vol. 39, pp. 25-46, March (2001).[pdf]


Refereed & reviewed conference proceedings:

  • H. Abebe, V. Tyree and N. S. Cockerham, "SPICE BSIM3 model parameters extraction and optimization for low temperature application." Proceedings 2009 Nanotechnology Conference, Vol. 3, pp. 647, May 3-7, (2009), Houston, TX, USA. (Oral presentation)[pdf]
  • H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, "Compact models of the quantized sub-band energy levels for MOSFET device application," IEEE UGIM Proceedings, pp. 58-60, July 13-16, (2008), Louisville, KY .(Oral presentation)[pdf]
  • H. Morris, E. Cumberbatch, D. Yong, H. Abebe and V. Tyree,"Density gradient quantum surface potential." Proceedings 2008 Nanotechnology Conference, Vol. 3, pp. 717, June 1-5, (2008), Boston, Massachusetts, USA. (Poster) [pdf]
  • H. Abebe, H. Morris, E. Cumberbatch and V. Tyree, "Compact models for double gate MOSFET with quantum mechanical effects using Lambert function." Proceedings 2008 Nanotechnology Conference, Vol. 3, pp. 849, June 1-5, (2008), Boston, Massachusetts, USA. (Oral presentation) [pdf]
  • H. Morris, H. Abebe and E. Cumberbatch, "Compact models for asymmetric double gate MOSFETs." Proceedings, Nanotechnology Conference, Vol. 3, pp. 649-653, May 20-24, (2007), Santa Clara, California, USA. (Poster)
  • H. Morris, E. Cumberbatch, H. Abebe and V. Tyree, "Compact modeling for the I-V characteristics of double gate and surround gate MOSFETs," IEEE UGIM Proceedings, pp. 117-121, June 25-28, (2006),San Jose, CA.(Oral presentation)[pdf]
  • H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, "Numerical and analytical results of the polysilicon gate depletion effect on MOS gate capacitance," IEEE UGIM Proceedings, pp. 111-115, June 25-28, (2006), San Jose, CA.(Oral presentation) [pdf]
  • H. Morris, H. Abebe, E. Cumberbatch and Uno, S., "Compact models for double gate and surround gate MOSFETs."Proceedings, Nanotechnology Conference, Vol. 3, pp. 824-827, May 7-11, (2006), Boston, Massachusetts, USA. (Poster)[pdf] [slides]
  • H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, "Analytical models for quantized sub-band energy levels and inversion charge centroid for MOS structures derived from asymptotic and WKB approximations."Proceedings, Nanotechnology Conference, Vol. 3, pp. 519-522, May 7-11, (2006), Boston, Massachusetts, USA.(Poster) [pdf]
  • H. Morris, E. Cumberbatch, H. Abebe and V. Tyree, "Analytical Modeling of Impact Ionization and Polysilicon Gate Depletion Effects for Application in Circuit Simulation." The 9th World Multi-Conference, WMSCI Proceedings, Vol. 3, pp. 319-323, Orlando, FL, July 10-13, (2005). (Oral presentation).. [pdf]
  • H. Abebe, V. Tyree, E. Cumberbatch and H. Morris, "A Simplified Current-Voltage (I-V) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET." The 9th World Multi-Conference, WMSCI Proceedings, Vol. 6, pp. 211-214, Orlando, FL, July 10-13, (2005). (Oral presentation and selected as the BEST PAPER in the session). [pdf]
  • H. Morris, E. Cumberbatch and H. Abebe, "SOS Gate Capacitance Modeling." Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 68-71, Anaheim, CA, May 8-12, (2005). (Poster).[pdf]
  • E. Cumberbatch, H. Abebe, H. Morris and V. Tyree, "Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS." Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 57-60, Anaheim, CA, May 8-12, (2005). (Poster). [pdf]
  • H. Abebe, E. Cumberbatch, V. Tyree and H. Morris, "MOSFET Analytical Inversion Charge Model with Quantum Effects Using a Triangular Potential Well Approximation." Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 64-67, Anaheim, CA, May 8-12, (2005). (Poster). [pdf]
  • H. Abebe and E. Cumberbatch, "Modeling quantum effects on MOSFET channel surface potential." Proceedings 2004 International Conference on Computing, Communications and Control Technologies: CCCT'04, Vol. 7, pp198-201, August 14-17, (2004), Austin, Texas, USA. (Oral presentation). [pdf ]
  • H.C. Morris and H. Abebe, "MOSFET analytical substrate current model for circuit simulation." Proceedings 2004 International Conference on Computing, Communications and Control Technologies: CCCT'04, Vol. 1, pp162-165, August 14-17, (2004), Austin, Texas, USA. (Oral presentation).  [pdf]
  • H. C. Morris, M.M De Pass, and H. Abebe, "Analytic formulae for the impact ionization rate for use in compact models for ultra-short semiconductor devices." Proceedings 2004 International Nanotechnology Conference, Vol. 2, pp. 140-143, March 7-11, (2004), Boston, Massachusetts, USA. (Poster). [pdf]
  • H. Abebe and E. Cumberbatch, "Quantum mechanical effects correction models for inversion charge and current-voltage (I-V) characteristics of the MOSFET device." Proceedings 2003 International Nanotechnology Conference, Vol. 2, pp. 218-221,
    February 23-27, (2003), San Francisco, USA. (Oral presentation).. [pdf]



Technical notes and conference abstracts:

1. Uno, S, H. Abebe and E. Cumberbatch, "Analytical formulae of quantum-mechanical electron density in inversion layer in planar MOSFETs." IWCM 2006, p. 25, January 24, (2006), Pacifico Yokohama, Yokohama, Japan. (Oral presentation).[pdf]

2. Uno, S., H. Abebe and E. Cumberbatch, "Analytical solutions to quantum drift-diffusion equation for quantum mechanical modeling of MOS structures," Solid State Device and Materials, Sep. 12-15, (2005), extended abstracts pp. 592-593, Kobe, Japan. (Poster). [pdf]

3. Henok Abebe and Ellis Cumberbatch, "Modeling quantum effects on current/voltage characteristics of a MOSFET transistor," 4th SoCAMS Symposium, April 24, (2004), Claremont, CA, USA. (Oral presentation). [pdf]

4. Henok Abebe and Vance C. Tyree, “BSIM3v3.1 Model Parameters Extraction & Optimization.” USC-ISI MOSIS Service’s Technical Note, October (2000). (www.mosis.com/support/technical-notes.html).

5. Ellis Cumberbatch, Henok Abebe, Maria Nunez, Miriam Nuno, Diana Verzi, Zhiyu Bo, Shomeek Mukhopadhyay, Dina Rojas and Vance Tyree, “MOSFET Device Modeling.” Claremont Graduate University and the MOSIS Service of USC-ISI, final report. June (1998).

6. Jerome Spanier, Rong Kong, Henok Abebe, Yongzeng Lai and Diana Verzi, “Adaptive Methods for Accelerating Monte Carlo Convergence.” Claremont Graduate University and Los Alamos National Laboratory, interim report, January (1997).



Invited Presentations:

  • H. Abebe, “Nanoscale Double Gate (DG) MOSFET TransistorModeling for Circuit Simulation Application” Claremont Colleges Math-in-Industry Workshop, July 27, (2009). (http://ccms.claremont.edu/)
  • H. Abebe, “Compact Modeling for Symmetric and Asymmetric DoubleGate MOSFETs”, 1st International MOS-AK Meeting, co-located with CMC Meeting and IEEE-IEDM Conference, Dec.13 (2008), San Francisco, CA, USA.( http://www.mos-ak.org/sanfrancisco/)
  • H. Abebe, “Transistor modeling for circuit simulation application”,MITACS industrial math summer workshop at Simon Fraser University, July 23, (2007), Vancouver, B.C, Canada.
    (http://www.sfu.ca/index.html)
  • H. Abebe, “Transistor modeling, including quantum effects, for circuitsimulation application,” Addis Ababa University Science Faculty, May 11, (2007), Addis Ababa, Ethiopia. (http://www.aau.edu.et/)