n`HBqq @@@ @@@@ =Yqp EN DB P     & . 6i7 &OG a ? Henson, P. M. Bratton, D. L. Fadok, V. A.a 2001B<The phosphatidylserine receptor: a crucial molecular switch?Nat Rev Mol Cell Biola2 8t 627-33 Aug11483996 Henson, P.M.>8Animal Antigen Presentation Apoptosis/physiology Calcium-Binding Proteins/physiology Carrier Proteins/physiology Cell Adhesion Cell Aging Cell Death/*physiology Comparative Study Dendritic Cells/physiology Endopeptidases/physiology Human Inflammation Inflammation Mediators/metabolism LDL-Receptor Related Protein 1 Membrane Lipids/physiology Models, Biological Necrosis Phagocytosis/physiology Phosphatidylserines/physiology Receptors, Cell Surface/*physiology Receptors, Immunologic/physiology Ribonucleoproteins/physiology Transforming Growth Factor beta/physiologyThe uptake and removal of necrotic or lysed cells involves inflammation and an immune response, due in part to processes that involve members of the collectin family, surface calreticulin and CD91. Clearance of apoptotic Agarwal2002H Agarwal2002 Capano2002 Chow20020 Cooper2002 Cooper2002 Cooper2002F Hillenbrand2002H Ivanov2002FKeilmann20020G Kurabayashi2002H Levinshtein2002 Li2002 Melloch2002 Melloch2002G Nishizawa2002 Palmour2002 Palmour2002H Palmour2002G Plotka20020 Singh2002 Singh2002F Taubner2002 Taubner2002 Taubner2002 Taubner2002F Taubner2002 Taubner2002 Taubner2002 Taubner2002F Taubner2002Zhou;ZhouXiao;Zhou;Zhou;Zhou;Zhouao;Zhou;Zhou;Zhou;Zhou;Zhou;Zhou;Zhou;ZhouWhiteWeish*Whiteh*Whiteh*Whiteh*White*WhiteWeish*White*Whiteh*Whiteish*White*White*Whiteish*White*Whiteh*Whiteh*Whitel*Whiteitzel*Whitel*Whitezel*WhiteWeitzel*Whitezel*Whitel*Whitel*White*Whitel*Whitezel*Whitel*White yuCtlru eeMid aE*eltcir coCdncuitivytE eltcorylet/sm*tebalosi miMrcsoocyp ,hPsa-eoCtnartsM dole,sC ehimac luNlcoeised spSrose*/ematobilmsS oper,sB caetirlag/ortw h &edevolmpne/tematobilmsS eterioosemirmsU tlarectnirufagitnoW tare*/ematobilms 00129-91 3oJruan lrAitlcejdthpt/:w/wwn.bc.iln.min.hog/vnertzeq/euyrf.gc?imc=deRrteievd&=buPMbded&po=tiCatitnol&si_tiusd4=992854.min.hog/vnertzeq/euyrf.gc?imc=deRrteievd&=buPMbded&po=tiCatitnol&si_tiusd1=900189)2iusd1=905764o0 ni)s AuthorsqJournals Keywords A                                Lq Agarwal, A.Agarwal, A. K. Agarwal, A.K. Allen, S. Alok, D. Ancona, M. G.daArnold, E. Affiliation Philips Res Philips Electron North America Briarcliff Manor N. Y. U. S. A. Baliga, B. J.hdBaliga, B. J. Affiliation Power Semicond Res Center North Carolina State Univ Raleigh N. C. U. S. A.liBaliga, B. J. Affiliation Power Semiconductor Res Center North Carolina State Univ Raleigh N. C. U. S. A.TQBhatnagar, M. Affiliation Phoenix Corp Res Labs Motorola Inc Tempe A. Z. U. S. A. Brown, D. M. Brown, S.Buckley, C. D.,'Capano, M. A. Affiliation Sch of Electr Capano, M.A.(%Carter, C. Affiliation Dept of ElectrD?Carter, C. H. Jr Affiliation Cree Res Inc Durham N. C. U. S. A.Carter, C. H., Jr.TQChante, J. P. Affiliation Inst Nat des Sci Appliquees de Lyon Villeurbanne France,&Chow, L. C. Affiliation Dept of Electr Chow, T.P.<8Comput. Eng, Central Florida Univ Orlando F. L. U. S. A.4/Comput. Eng, Cornell Univ Ithaca N. Y. U. S. A.<6Comput. Eng, Purdue Univ West Lafayette I. N. U. S. A. Cooper, J.A.Cooper, J.A., Jr.0*Davis, R. F. Affiliation Dept of Mater Sci(#Dev, Siemens A. G. Erlangen Germany,'Dev. Center, Schenectady N. Y. U. S. A.Dmitriev, V. A.Dongping, Zhang Downey, E.85Eng, North Carolina State Univ Raleigh N. C. U. S. A.TOFekade, K. Affiliation Dept of Electr Eng Howard Univ Washington D. C. U. S. A.Friedrichs, P. Gamiz, F. Ghezzo, M. Glass, R. C.d^Gupta, R. P. Affiliation Div of Solid State Devices Central Electron Eng Res Inst Pilani India Harris, G. L.PJHarris, G. L. Affiliation Sch of Eng Howard Univ Washington D. C. U. S. A. Heinisch, I. Hennessy, W.Hillenbrand, R. Irvine, A. K. Irvine, K. G. Ivanov, P. A. Ivanov, P.A. Keilmann, F.d_Kelner, G. Affiliation Mater Sci Res Center of Excellence Howard Univ Washington D. C. U. S. A. Kern, R. S. Khanna, V. K. Kordina, O.TPKornegay, K. T. Affiliation Sch of Electr Eng Cornell Univ Ithaca N. Y. U. S. A. Kretchmer, J.Krishnamurthy, V. Kumar, A.Kurabayashi, T. Lanois, F.Levinshtein, M. E.Levinshtein, M.E. Li, Y.Locatelli, M. L.hdLopez-Villanueva, J. A. Affiliation Dept de Electron y Tecnologia de Computadores Granada Univ SpainMcLarty, P. K.heMcLarty, P. K. Affiliation Power Semicond Res Centre North Carolina State Univ Raleigh N. C. U. S. A. Melloch, M.R.0*Michon, G. Affiliation Gen Electr Corp Res Mitlehner, H. Moore, K. Nishizawa, J.Nordquist, K. K. Palmour, J.Palmour, J. W.XRPalmour, J. W. Affiliation Dept of Phys Kansas State Univ Manhattan K. S. U. S. A.LFPalmour, J. W. Affiliation Ioffe Inst Acad of Sci St Petersburg Russia Palmour, J.W. Peizhen, Zhou Peters, D. Planson, D. Plotka, P.Raghunathan, R.85Raynaud, C. Affiliation Insa Cnrs Villeurbanne FranceRebello, N. S.HBRendell, R. W. Affiliation Naval Res Lab Washington D. C. U. S. A. Roldan, J. B. Ross, E. Saks, N. S. Savill, J. Schomer, R. Schorner, R.Senpeng, Sheng Shams, S. F. Shaw, K.Shoucair, F. S. Singh, R. Sood, S. C. Spencer, M.Spencer, M. G.XSSpencer, M. G. Affiliation Dept of Electr Eng Howard Univ Washington D. C. U. S. A. Sridevan, S.$!Stephani, D. Affiliation Corp ResHDStephani, D. Affiliation Corp Technol Siemens A. G. Erlangen GermanySundaram, K. B. Taubner, T. Thero, C.Wagner, W. E., III Weis, B.Weitzel, C. E.PJWhite, M. H. Affiliation Lucent Technol Bell Labs Allentown P. A. U. S. A. Xiao, Tang Zhou, P.  PMElectron Devices, IEEE Transactions on Electron Devices, IEEE Transactions on,'Electronics Letters Electronics Letters Nature  Z 0.5 micron 0.75 muJ 0.8 micron1 A1 kHz to 10 MHz10 A1000 to 1500 C 1000 V 105 ns 1200 degC 1200 V125 C130 A 1400 V 15 muJ 1600 V 1700 V 2.6 kV 2.9 eV20 C 25 to 500 C 250 kHz 2D simulation300 C 337 nm35 mm350 C 3C-SiC 4.2 kW 4.9 to 8.6 kV 4H-SiC4H-SiC epitaxial layers4H-SiC npnp thyristors5 A 5 year500 MHz to 32 GHz500 V57 W 6.4 kV600 V 633 nm650 C(#6H silicon carbide MOSFET modelling,)6H silicon carbide vertical power MOSFETs 6H-SiC$6H-SiC Schottky barrier diodes6H-SiC substrate700 V800 V85 to 100 micron(#A0130R (Reviews and tutorial papers$ A4270F (Other optical materials) A6170 (Defects in crystals),&A6480E (Stoichiometry and homogeneity)40A6855 (Thin film growth, structure, and epitaxy),(A7220F (Low-field transport and mobilitylgA7220J (Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators))HCA7280J (Conductivity of other crystalline inorganic semiconductors)0*A7320H (Surface impurity and defect levels$ A7340N (Metal-nonmetal contacts)85A7750 (Dielectric breakdown and space-charge effects)85A7865J (Optical properties of nonmetallic thin films)@