# Publications

### 2017

#### Confinement Effects on Radiation Response of SOI FinFETs at the Scaling Limit

Esqueda, Ivan SIn

*IEEE Electron Device Letters*

2017, 306–309 pages

#### Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

Esqueda, Ivan S, H. Tian, X. Yan, H. WangIn

*IEEE Transactions on Electron Devices*

2017, 5163-5171 pages

https://doi.org/10.1109/TED.2017.2759124

#### High breakdown electric field in Ga2O3/graphene vertical barristor heterostructure

X. Yan, Esqueda, IS, J. Ma, J. Tice, H. WangIn

*Applied Physics Letters*

2017

#### Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses

Esqueda, Ivan S, H. Zhou, H. WangIn

*IEEE Electron Device Letters*

2017

### 2016

#### Surface-potential-based compact modeling of BTI

Esqueda, Ivan Sanchez, Barnaby, Hugh JIn

*Reliability Physics Symposium (IRPS), 2016 IEEE International*

2016, XT–06 pages

### 2015

#### Modeling Radiation-Induced Scattering in Graphene

Esqueda, I Sanchez, Cress, CDIn

*IEEE Transactions on Nuclear Science*

2015, 2906–2911 pages

#### Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits

Adell, Philippe C, Rax, Bernard, Esqueda, Ivan S, Barnaby, Hugh JIn

*IEEE Transactions on Nuclear Science*

2015, 2476–2481 pages

#### Compact modeling of total ionizing dose and aging effects in MOS technologies

Esqueda, I Sanchez, Barnaby, Hugh J, King, Michael PatrickIn

*IEEE Transactions on Nuclear Science*

2015, 1501–1515 pages

#### Physics-based reliability model for large-scale CMOS circuit design

Barnaby, Hugh James, Esqueda, Ivan Sanchez2015

#### The impact of defect scattering on the quasi-ballistic transport of nanoscale conductors

Esqueda, IS, Cress, CD, Y. Cao, Che, Y, Fritze, M, Zhou, CIn

*Journal of Applied Physics*

2015, 084319 pages

#### The impact of stress-induced defects on MOS electrostatics and short-channel effects

Esqueda, Ivan SIn

*Solid-State Electronics*

2015, 167–172 pages

### 2014

#### Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure

Esqueda, Ivan S, Cress, Cory D, Che, Yuchi, Cao, Yu, Zhou, ChongwuIn

*Journal of Applied Physics*

2014, 054506 pages

#### A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits

Esqueda, Ivan S, Barnaby, Hugh JIn

*Solid-State Electronics*

2014, 81–86 pages

#### Cross-layer modeling and simulation of circuit reliability

Cao, Yu, Velamala, Jyothi, Sutaria, Ketul, Chen, Mike Shuo-Wei, Ahlbin, Jonathan, Esqueda, Ivan Sanchez, Bajura, Michael, Fritze, MichaelIn

*IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems*

2014, 8–23 pages

### 2013

#### Defect-based compact model for circuit reliability simulation in advanced CMOS technologies

Esqueda, IS, Barnaby, HJIn

*Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International*

2013, 45–49 pages

#### Gamma ray induced structural effects in bare and Ag doped Ge–S thin films for sensor application

Mitkova, M, P. Chen, Ailavajhala, M, Butt, DP, Tenne, DA, Barnaby, Hugh, Esqueda, I SanchezIn

*Journal of Non-Crystalline Solids*

2013, 195–199 pages

#### Modeling radiation-induced degradation in top-gated epitaxial graphene field-effect-transistors (FETs)

Esqueda, Ivan S, Cress, Cory D, Anderson, Travis J, Ahlbin, Jonathan R, Bajura, Michael, Fritze, Michael, Moon, Jeong-SIn

*Electronics*

2013, 234–245 pages

#### Modeling radiation-induced degradation in top-gated epitaxial graphene field-effect-transistors (FETs)

Esqueda, Ivan S, Cress, Cory D, Anderson, Travis J, Ahlbin, Jonathan R, Bajura, Michael, Fritze, Michael, Moon, Jeong-SIn

*Electronics*

2013, 234–245 pages

### 2012

#### Impact of Low Temperatures $($$< 125$$~$$$backslash$ rm K$$) $ on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs

Adell, Philippe C, Esqueda, Ivan S, Barnaby, Hugh J, Rax, Bernard, Johnston, Allan HIn

*IEEE Transactions on Nuclear Science*

2012, 3081–3086 pages

#### Total ionizing dose induced charge carrier scattering in graphene devices

Cress, Cory D, Champlain, James G, Esqueda, Ivan S, Robinson, Jeremy T, Friedman, Adam L, McMorrow, Julian JIn

*IEEE Transactions on Nuclear Science*

2012, 3045–3053 pages

#### Total ionizing dose induced charge carrier scattering in graphene devices

Cress, Cory D, Champlain, James G, Esqueda, Ivan S, Robinson, Jeremy T, Friedman, Adam L, McMorrow, Julian JIn

*IEEE Transactions on Nuclear Science*

2012, 3045–3053 pages

#### Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity

Esqueda, Ivan S, Barnaby, Hugh J, Adell, Philippe CIn

*IEEE Transactions on Nuclear Science*

2012, 701–706 pages

#### Modeling the non-uniform distribution of radiation-induced interface traps

Esqueda, Ivan S, Barnaby, Hugh JIn

*IEEE Transactions on Nuclear Science*

2012, 723–727 pages

#### Modeling the non-uniform distribution of radiation-induced interface traps

Esqueda, Ivan S, Barnaby, Hugh JIn

*IEEE Transactions on Nuclear Science*

2012, 723–727 pages

### 2011

#### Modeling low dose rate effects in shallow trench isolation oxides

Esqueda, Ivan S, Barnaby, Hugh J, Adell, Philippe C, Rax, Bernard G, Hjalmarson, Harold P, McLain, Michael L, Pease, Ronald LIn

*IEEE Transactions on Nuclear Science*

2011, 2945–2952 pages

#### Modeling the non-uniform distribution of interface traps

Esqueda, Ivan S, Barnaby, Hugh JIn

*Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on*

2011, 15–19 pages

#### Modeling inter-device leakage in 90 nm bulk CMOS devices

Esqueda, Ivan Sanchez, Barnaby, Hugh J, Holbert, Keith E, Boulghassoul, YounesIn

*IEEE Transactions on Nuclear Science*

2011, 793–799 pages

#### Structural study of Ag-Ge-S solid electrolyte glass system for resistive radiation sensing

Chen, Ping, Ailavajhala, Mahesh, Mitkova, Maria, Tenne, Dmitri, Esqueda, Ivan Sanchez, Barnaby, HughIn

*Microelectronics and Electron Devices (WMED), 2011 IEEE Workshop on*

2011, 1–4 pages

#### Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Esqueda, Ivan Sanchez, Barnaby, Hugh J, Holbert, Keith E, El-Mamouni, Farah, Schrimpf, Ronald DIn

*IEEE Transactions on Nuclear Science*

2011, 499–505 pages

#### Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Esqueda, Ivan Sanchez, Barnaby, Hugh J, Holbert, Keith E, El-Mamouni, Farah, Schrimpf, Ronald DIn

*IEEE Transactions on Nuclear Science*

2011, 499–505 pages

#### Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Esqueda, Ivan S, Barnaby, Hugh, Adell, Philippe CIn

*12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011*

2011

#### Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Esqueda, Ivan S, Barnaby, Hugh, Adell, Philippe CIn

*12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011*

2011

### 2010

#### Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit

Schlenvogt, Garrett James, Barnaby, Hugh J, Esqueda, Ivan S, Holbert, Keith E, Wilkinson, Jeff, Morrison, Scott, Tyler, LarryIn

*IEEE Transactions on Nuclear Science*

2010, 3609–3614 pages

### 2009

#### Modeling the radiation response of fully-depleted SOI n-channel MOSFETs

Esqueda, IS, Barnaby, HJ, McLain, ML, Adell, PC, Mamouni, FE, Dixit, SK, Schrimpf, R.D., Xiong, WIn

*IEEE Transactions on Nuclear Science*

2009, 2247–2250 pages

#### Modeling ionizing radiation effects in solid state materials and CMOS devices

Barnaby, Hugh J, McLain, Michael L, Esqueda, Ivan Sanchez, Chen, Xiao JieIn

*IEEE Transactions on Circuits and Systems I: Regular Papers*

2009, 1870–1883 pages

#### Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors

McLain, Michael L, Barnaby, Hugh J, Esqueda, Ivan S, Oder, Jonathan, Vermeire, BertIn

*Reliability Physics Symposium, 2009 IEEE International*

2009, 174–179 pages

### 2008

#### Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices

Mamouni, Farah E, Dixit, Sriram K, Schrimpf, Ronald D, Adell, Philippe C, Esqueda, Ivan S, McLain, Michael L, Barnaby, Hugh J, Cristoloveanu, Sorin, Xiong, WeizeIn

*IEEE Transactions on Nuclear Science*

2008, 3259–3264 pages

### 2007

#### Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

Barnaby, Hugh J, Mclain, Michael, Esqueda, Ivan SanchezIn

*Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms*

2007, 1142–1145 pages

### 2005

#### Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies

Esqueda, Ivan Sanchez, Barnaby, Hugh J, Alles, Michael LIn

*IEEE transactions on nuclear science*

2005, 2259–2264 pages

#### Modeling" Dog Bone" Gate Geometry n-Channel MOSFETs

Mclain, Michael, Campola, Michael, Esqueda, Ivan Sanchez, Barnaby, Hugh JIn

*Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on*

2005, PJ2–1 pages

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