THE CALIFORNIA DEFENSE READY ELECTRONICS AND MICRODEVICES SUPERHUB

Beta Gallium Oxide Epitaxial Growth and Vertical Power Devices

Event Details

June 5, 2026

Join Zoom Webinar

Passcode: 862998

Host: Steve Crago
POC: Amy Kasmir

As global power consumption continues to rise, solutions for creating highly efficient power electronic devices become critical to reduce the amount of energy wasted during power conversion for large systems such as AI data centers. A contender for creating the next generation of efficient power devices is the semiconducting material beta gallium oxide (β-Ga2O3). β-Ga2O3 utilizes its ultra-wide bandgap of 4.6 eV and predicted critical electric field strength of 8 MV/cm to access multi-kV breakdown voltages while keeping resistive losses low. To achieve high breakdown and low On-resistances, epitaxial films with exceptional purity, controllable doping, and multiple microns of thickness must be achieved. This talk will cover the recent progress made in tackling the challenges of epitaxial growth of β-Ga2O3 using metal organic chemical vapor deposition (MOCVD) and highlighting the results achieved from devices fabricated on these MOCVD epitaxial layers. Key results include controllable low doping, record-high material mobilities, and state-of-the art Schottky and heterojunction diodes with kilovolt-class breakdown voltages. I will also highlight the key recent results in high performance 3-10 kV Gallium Oxide diodes and 3.4 kV vertical transistor exhibiting three times higher average electric fields compared to SiC and GaN.

Speaker Bio

Sriram Krishnamoorthy received the bachelor’s degree in electrical engineering and physics from the Birla Institute of Technology and Science, Pilani, India, in 2009, and the Ph.D. degree from the Electrical and Computer Engineering Department, The Ohio State University, Columbus, OH, USA, in 2014. Sriram Krishnamoorthy is currently an Associate Professor in the Materials Department at University of California, Santa Barbara, where his group works at the intersection of materials, electrical engineering, and physics to study and engineer next generation (ultra)wide band gap semiconductors such as Gallium Oxide. His research interests are in the areas of epitaxial growth, electronic transport, design/modeling, micro/nano fabrication, and characterization of electronic/optoelectronic devices for a wide range of applications such as power electronics, high frequency electronics and ultra-violet optoelectronics. He has authored or co-authored publications on several topics covering Gallium Nitride interband tunnel junctions for efficient hole injection in III-nitride optoelectronic devices, molecular beam epitaxy growth of III-nitrides, Gallium (Aluminum) Oxide thin films and heterostructures, metalorganic vapor phase epitaxy of UWBG Gallium (Aluminum) Oxide thin films and heterostructures, and high performance lateral and vertical power diodes and transistors based on Gallium Oxide.