Event Details

III-V compound semiconductor devices have transformed modern electronics. GaN-on-SiC high electron mobility transistors (HEMTs) deliver outstanding performance for microwave and millimeter-wave power amplifiers, RF switches, and compact power converters, driven by the superior electrical and thermal properties of the GaN/SiC material system. Teledyne Scientific Company has a long history of innovation in III–V compound semiconductor materials and devices. Over the past decade, we have advanced RF and power switching technologies through material-device co-design using AlGaN/GaN heterostructures. As part of the CA DREAMS GaNAmP program, we have demonstrated GaN transistor chiplets based on our charge-enhanced HEMT (CE-HEMT) technology, which enables unique capabilities for both power amplifier and RF switch applications. In this talk, I will highlight Teledyne’s GaN-on-SiC device library and discuss how it supports optimal circuit performance in next-generation system demonstrations.

January 9, 2026

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Host: Steve Crago
POC: Amy Kasmir

Speaker Bio

Keisuke Shinohara received the Ph.D. degree in Solid State Physics from Osaka University, Japan in 1998. He is a principal scientist at Teledyne Scientific Company, where he leads R&D on GaN-based devices for RF and power electronics applications. He has published >140 technical papers and international conference proceedings, including >50 invited talks and 3 book chapters. He is currently a chair of the IEEE MTT-S Technical Committee on Microwave and Millimeter-wave Solid State Devices (TC-9).