Publications
Export 22 results:
"Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride",
IEEE Transactions on Electron Devices, pp. 5163-5171, 2017.
"Confinement Effects on Radiation Response of SOI FinFETs at the Scaling Limit",
IEEE Electron Device Letters, vol. 38, no. 3: IEEE, pp. 306–309, 2017.
"Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses",
IEEE Electron Device Letters, 2017.
"Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits",
IEEE Transactions on Nuclear Science, vol. 62, no. 6: IEEE, pp. 2476–2481, 2015.
"The impact of stress-induced defects on MOS electrostatics and short-channel effects",
Solid-State Electronics, vol. 103: Elsevier, pp. 167–172, 2015.
"Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure",
Journal of Applied Physics, vol. 115, no. 5: AIP, pp. 054506, 2014.
"A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits",
Solid-State Electronics, vol. 91: Elsevier, pp. 81–86, 2014.
"Modeling radiation-induced degradation in top-gated epitaxial graphene field-effect-transistors (FETs)",
Electronics, vol. 2, no. 3: Multidisciplinary Digital Publishing Institute, pp. 234–245, 2013.
"Modeling radiation-induced degradation in top-gated epitaxial graphene field-effect-transistors (FETs)",
Electronics, vol. 2, no. 3: Multidisciplinary Digital Publishing Institute, pp. 234–245, 2013.
"Impact of Low Temperatures $($\$< 125$\$\~$\$$\backslash$ rm K$\$) $ on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs",
IEEE Transactions on Nuclear Science, vol. 59, no. 6: IEEE, pp. 3081–3086, 2012.
"Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity",
IEEE Transactions on Nuclear Science, vol. 59, no. 4: IEEE, pp. 701–706, 2012.
"Modeling the non-uniform distribution of radiation-induced interface traps",
IEEE Transactions on Nuclear Science, vol. 59, no. 4: IEEE, pp. 723–727, 2012.
"Modeling the non-uniform distribution of radiation-induced interface traps",
IEEE Transactions on Nuclear Science, vol. 59, no. 4: IEEE, pp. 723–727, 2012.
"Total ionizing dose induced charge carrier scattering in graphene devices",
IEEE Transactions on Nuclear Science, vol. 59, no. 6: IEEE, pp. 3045–3053, 2012.
"Total ionizing dose induced charge carrier scattering in graphene devices",
IEEE Transactions on Nuclear Science, vol. 59, no. 6: IEEE, pp. 3045–3053, 2012.
"Modeling low dose rate effects in shallow trench isolation oxides",
IEEE Transactions on Nuclear Science, vol. 58, no. 6: IEEE, pp. 2945–2952, 2011.
"Modeling the non-uniform distribution of interface traps",
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on: IEEE, pp. 15–19, 2011.
"Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",
12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011, 2011.
"Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",
12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011, 2011.
"Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit",
IEEE Transactions on Nuclear Science, vol. 57, no. 6: IEEE, pp. 3609–3614, 2010.
"Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors",
Reliability Physics Symposium, 2009 IEEE International: IEEE, pp. 174–179, 2009.
"Gate-length and drain-bias dependence of band-to-band tunneling-induced drain leakage in irradiated fully depleted SOI devices",
IEEE Transactions on Nuclear Science, vol. 55, no. 6: IEEE, pp. 3259–3264, 2008.