Abstract

1 University of Southern California-Information Sciences Institute 4676 Admiralty Way, Marina del Rey, CA 90292 Abstract: The effect of copper interconnects on memories is investigated. HSPICE simulations indicate a 30% improvement in the access time of a 2K× 16 bit SRAM with copper interconnects compared to aluminum. Circuit techniques that utilize the transmission-line effect of copper interconnects for low-power operation are presented. HSPICE simulation results indicate upto a 25% energy savings in the bit lines for write operations.

Date

2000

Authors

Arani Sinha, Sushil Singh, Amir Ajami, Ak Razi Ahmed, Jay Moon, Marcos Ferretti, Sunan Tugsinavsut, Peter Yeh, Recep Ozdag, Bill Athas, Peter Beerel, Sandeep Gupta, Massoud Pedram, Nestoras Tzartzanis

Journal

Semiconductor Research Corporation Design Contest