Abstract

One illustrative device disclosed herein includes a layer of semiconductor material and a first Bragg reflector structure positioned in the layer of semiconductor material, wherein the first Bragg reflector structure comprises a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements. In this example, the device also includes an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal

Date

2022

Authors

Y Bian, AP Jacob

Inventors

Yusheng Bian, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

11340403

Application_number

16807942