Abstract

An image sensor includes an array of optically switchable magnetic tunnel junctions (MTJS) arranged in columns and rows. The image sensor has first lines of transparent con ductive material and second lines of conductive material. Each first line is in contact with the free layers of the MTJS in a corresponding row. Each second line is electrically connected to the fixed layers MTJs in a corresponding column. The first lines are concurrently exposable to radia tion. The first and second lines are selectively biasable. In a global reset operation, biasing conditions are such that all MTJs are switched to an anti-parallel state. In a global sense operation, biasing conditions are such that, depending upon the intensity of radiation received at those portions of the first lines in contact with MTJs, the MTJs may switch to a parallel state. In selective read operations, biasing conditions are such that stored data values in the MTJs …

Date

2022

Authors

AR Jaiswal, AP Jacob, Y Bian, DC Pritchard

Inventors

Akhilesh R Jaiswal, Ajey Poovannummoottil Jacob, Yusheng Bian, David C Pritchard

Patent_office

US

Patent_number

11226231

Application_number

16911950