Abstract

Structures for a bitcell of a non-volatile memory and meth ods of fabricating and using such structures. Non-volatile memory elements are arranged in a Wheatstone bridge arrangement having a first terminal and a second terminal. A first field-effect transistor is coupled with the first terminal of the Wheatstone bridge arrangement, and a second field effect transistor is coupled with the second terminal of the Wheatstone bridge arrangement.

Date

2021

Authors

AP Jacob, A Agrawal

Inventors

Ajey Poovannummoottil Jacob, Amogh Agrawal

Patent_office

US

Patent_number

11056535

Application_number

16425360