Publications
Scaling FETs to (beyond?) 10 nm: From semiclassical to quantum models
Abstract
We present full-band semi-classical and quantum-mechanical transport models required to study electronic transport in nanometer-scale devices.
- Date
- 2012
- Authors
- MV Fischett, SJ Aboud, J Kim, ZY Ong, S Narayanan
- Conference
- COMMAD 2012
- Pages
- 19-20
- Publisher
- IEEE