Publications

Scaling FETs to (beyond?) 10 nm: From semiclassical to quantum models

Abstract

We present full-band semi-classical and quantum-mechanical transport models required to study electronic transport in nanometer-scale devices.

Date
2012
Authors
MV Fischett, SJ Aboud, J Kim, ZY Ong, S Narayanan
Conference
COMMAD 2012
Pages
19-20
Publisher
IEEE