University of Southern California

Export 11 results:
2012
Hooten, N. C., L. D. Edmonds, W. G. Bennett, J. R. Ahlbin, N. A. Dodds, R. A. Reed, R. D. Schrimpf, and R. A. Weller, "The Significance of High-Level Carrier Generation Conditions for Charge Collection in Irradiated Devices", Nuclear Science, IEEE Transactions on, vol. 59, no. 6, pp. 2710 -2721, dec., 2012.
2011
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, B. L. Bhuva, L. W. Massengill, and R. D. Schrimpf, "Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures", Device and Materials Reliability, IEEE Transactions on, vol. 11, no. 1, pp. 179 -186, march, 2011.
Gadlage, M. J., J. R. Ahlbin, B. L. Bhuva, N. C. Hooten, N. A. Dodds, R. A. Reed, L. W. Massengill, R. D. Schrimpf, and G. Vizkelethy, "Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology", Nuclear Science, IEEE Transactions on, vol. 58, no. 3, pp. 1093 -1097, june, 2011.
Artola, L., G. Hubert, K. M. Warren, M. Gaillardin, R. D. Schrimpf, R. A. Reed, R. A. Weller, J. R. Ahlbin, P. Paillet, M. Raine, et al., "SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node", Nuclear Science, IEEE Transactions on, vol. 58, no. 3, pp. 1338 -1346, june, 2011.
2010
Gadlage, M. J., J. R. Ahlbin, B. L. Bhuva, L. W. Massengill, and R. D. Schrimpf, "Single event transient pulse width measurements in a 65-nm bulk CMOS technology at elevated temperatures", Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 763 -767, may, 2010.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, V. Ramachandran, C. A. Dinkins, N. D. Pate, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, R. L. Shuler, et al., "Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures", Device and Materials Reliability, IEEE Transactions on, vol. 10, no. 1, pp. 157 -163, march, 2010.
Jagannathan, S., M. J. Gadlage, B. L. Bhuva, R. D. Schrimpf, B. Narasimham, J. Chetia, J. R. Ahlbin, and L. W. Massengill, "Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS", Nuclear Science, IEEE Transactions on, vol. 57, no. 6, pp. 3386 -3391, dec., 2010.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, B. L. Bhuva, L. W. Massengill, R. A. Reed, R. D. Schrimpf, and G. Vizkelethy, "Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes", Nuclear Science, IEEE Transactions on, vol. 57, no. 6, pp. 3336 -3341, dec., 2010.
2009
Gadlage, M. J., J. R. Ahlbin, V. Ramachandran, P. Gouker, C. A. Dinkins, B. L. Bhuva, B. Narasimham, R. D. Schrimpf, M. W. McCurdy, M. L. Alles, et al., "Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies", Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3115 -3121, dec., 2009.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, V. Ramachandran, C. A. Dinkins, B. L. Bhuva, R. D. Schrimpf, and R. L. Shuler, "The effect of elevated temperature on digital single event transient pulse widths in a bulk CMOS technology", Reliability Physics Symposium, 2009 IEEE International, pp. 170 -173, april, 2009.
2007
Dasgupta, S., A. F. Witulski, B. L. Bhuva, M. L. Alles, R. A. Reed, O. A. Amusan, J. R. Ahlbin, R. D. Schrimpf, and L. W. Massengill, "Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS", Nuclear Science, IEEE Transactions on, vol. 54, no. 6, pp. 2407 -2412, dec., 2007.