University of Southern California

Export 9 results:
2012
Loveless, T. D., J. S. Kauppila, S. Jagannathan, D. R. Ball, J. D. Rowe, N. J. Gaspard, N. M. Atkinson, R. W. Blaine, T. R. Reece, J. R. Ahlbin, et al., "On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology", Nuclear Science, IEEE Transactions on, vol. 59, no. 6, pp. 2748 -2755, dec., 2012.
2011
Gaspard, N. J., J. R. Ahlbin, P. M. Gouker, N. M. Atkinson, M. J. Gadlage, A. F. Witulski, W. T. Holman, B. L. Bhuva, E. X. Zhang, and L. W. Massengill, "Characterization of Single-Event Transients Of Body-Tied vs. floating-body circuits in 150 nm 3D SOI", Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on, pp. 252 -255, sept., 2011.
Ahlbin, J. R., M. J. Gadlage, N. M. Atkinson, B. Narasimham, B. L. Bhuva, A. F. Witulski, W. T. Holman, P. H. Eaton, and L. W. Massengill, "Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths", Device and Materials Reliability, IEEE Transactions on, vol. 11, no. 3, pp. 401 -406, sept., 2011.
Atkinson, N. M., A. F. Witulski, W. T. Holman, J. R. Ahlbin, B. L. Bhuva, and L. W. Massengill, "Layout Technique for Single-Event Transient Mitigation via Pulse Quenching", Nuclear Science, IEEE Transactions on, vol. 58, no. 3, pp. 885 -890, june, 2011.
Atkinson, N. M., J. R. Ahlbin, A. F. Witulski, N. J. Gaspard, W. T. Holman, B. L. Bhuva, E. X. Zhang, L. Chen, and L. W. Massengill, "Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2578 -2584, dec., 2011.
Gaspard, N. J., A. F. Witulski, N. M. Atkinson, J. R. Ahlbin, W. T. Holman, B. L. Bhuva, T. D. Loveless, and L. W. Massengill, "Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOS", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2614 -2620, dec., 2011.
Ahlbin, J. R., N. M. Atkinson, M. J. Gadlage, N. J. Gaspard, B. L. Bhuva, T. D. Loveless, E. X. Zhang, L. Chen, and L. W. Massengill, "Influence of N-Well Contact Area on the Pulse Width of Single-Event Transients", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2585 -2590, dec., 2011.
Gouker, P. M., B. Tyrrell, M. Renzi, C. Chen, P. Wyatt, J. R. Ahlbin, S. Weeden-Wright, N. M. Atkinson, N. J. Gaspard, B. L. Bhuva, et al., "SET Characterization in Logic Circuits Fabricated in a 3DIC Technology", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2555 -2562, dec., 2011.
2010
Ahlbin, J. R., M. J. Gadlage, N. M. Atkinson, B. L. Bhuva, A. F. Witulski, W. T. Holman, L. W. Massengill, P. H. Eaton, and B. Narasimham, "Effect of multiple-transistor charge collection on SET pulse widths", Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 198 -202, may, 2010.