University of Southern California

Export 28 results:
2012
Loveless, T. D., J. S. Kauppila, S. Jagannathan, D. R. Ball, J. D. Rowe, N. J. Gaspard, N. M. Atkinson, R. W. Blaine, T. R. Reece, J. R. Ahlbin, et al., "On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology", Nuclear Science, IEEE Transactions on, vol. 59, no. 6, pp. 2748 -2755, dec., 2012.
2011
Gaspard, N. J., J. R. Ahlbin, P. M. Gouker, N. M. Atkinson, M. J. Gadlage, A. F. Witulski, W. T. Holman, B. L. Bhuva, E. X. Zhang, and L. W. Massengill, "Characterization of Single-Event Transients Of Body-Tied vs. floating-body circuits in 150 nm 3D SOI", Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on, pp. 252 -255, sept., 2011.
Ahlbin, J. R., M. J. Gadlage, N. M. Atkinson, B. Narasimham, B. L. Bhuva, A. F. Witulski, W. T. Holman, P. H. Eaton, and L. W. Massengill, "Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths", Device and Materials Reliability, IEEE Transactions on, vol. 11, no. 3, pp. 401 -406, sept., 2011.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, B. L. Bhuva, L. W. Massengill, and R. D. Schrimpf, "Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures", Device and Materials Reliability, IEEE Transactions on, vol. 11, no. 1, pp. 179 -186, march, 2011.
Gadlage, M. J., J. R. Ahlbin, B. L. Bhuva, N. C. Hooten, N. A. Dodds, R. A. Reed, L. W. Massengill, R. D. Schrimpf, and G. Vizkelethy, "Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology", Nuclear Science, IEEE Transactions on, vol. 58, no. 3, pp. 1093 -1097, june, 2011.
Atkinson, N. M., A. F. Witulski, W. T. Holman, J. R. Ahlbin, B. L. Bhuva, and L. W. Massengill, "Layout Technique for Single-Event Transient Mitigation via Pulse Quenching", Nuclear Science, IEEE Transactions on, vol. 58, no. 3, pp. 885 -890, june, 2011.
Atkinson, N. M., J. R. Ahlbin, A. F. Witulski, N. J. Gaspard, W. T. Holman, B. L. Bhuva, E. X. Zhang, L. Chen, and L. W. Massengill, "Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2578 -2584, dec., 2011.
Gaspard, N. J., A. F. Witulski, N. M. Atkinson, J. R. Ahlbin, W. T. Holman, B. L. Bhuva, T. D. Loveless, and L. W. Massengill, "Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOS", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2614 -2620, dec., 2011.
Ahlbin, J. R., N. M. Atkinson, M. J. Gadlage, N. J. Gaspard, B. L. Bhuva, T. D. Loveless, E. X. Zhang, L. Chen, and L. W. Massengill, "Influence of N-Well Contact Area on the Pulse Width of Single-Event Transients", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2585 -2590, dec., 2011.
Gouker, P. M., B. Tyrrell, M. Renzi, C. Chen, P. Wyatt, J. R. Ahlbin, S. Weeden-Wright, N. M. Atkinson, N. J. Gaspard, B. L. Bhuva, et al., "SET Characterization in Logic Circuits Fabricated in a 3DIC Technology", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2555 -2562, dec., 2011.
Ahlbin, J. R., T. D. Loveless, D. R. Ball, B. L. Bhuva, A. F. Witulski, L. W. Massengill, and M. J. Gadlage, "Double-pulse-single-event transients in combinational logic", Reliability Physics Symposium (IRPS), 2011 IEEE International, pp. 3C.5.1 -3C.5.6, april, 2011.
2010
Mahatme, N. N., I. Chatterjee, B. L. Bhuva, J. Ahlbin, L. W. Massengill, and R. Shuler, "Analysis of soft error rates in combinational and sequential logic and implications of hardening for advanced technologies", Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 1031 -1035, may, 2010.
Ahlbin, J. R., M. J. Gadlage, N. M. Atkinson, B. L. Bhuva, A. F. Witulski, W. T. Holman, L. W. Massengill, P. H. Eaton, and B. Narasimham, "Effect of multiple-transistor charge collection on SET pulse widths", Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 198 -202, may, 2010.
Gadlage, M. J., J. R. Ahlbin, B. L. Bhuva, L. W. Massengill, and R. D. Schrimpf, "Single event transient pulse width measurements in a 65-nm bulk CMOS technology at elevated temperatures", Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 763 -767, may, 2010.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, V. Ramachandran, C. A. Dinkins, N. D. Pate, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, R. L. Shuler, et al., "Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures", Device and Materials Reliability, IEEE Transactions on, vol. 10, no. 1, pp. 157 -163, march, 2010.
Ahlbin, J. R., M. J. Gadlage, D. R. Ball, A. W. Witulski, B. L. Bhuva, R. A. Reed, G. Vizkelethy, and L. W. Massengill, "The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process", Nuclear Science, IEEE Transactions on, vol. 57, no. 6, pp. 3380 -3385, dec., 2010.
Jagannathan, S., M. J. Gadlage, B. L. Bhuva, R. D. Schrimpf, B. Narasimham, J. Chetia, J. R. Ahlbin, and L. W. Massengill, "Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS", Nuclear Science, IEEE Transactions on, vol. 57, no. 6, pp. 3386 -3391, dec., 2010.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, B. L. Bhuva, L. W. Massengill, R. A. Reed, R. D. Schrimpf, and G. Vizkelethy, "Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes", Nuclear Science, IEEE Transactions on, vol. 57, no. 6, pp. 3336 -3341, dec., 2010.
2009
Amusan, O. A., L. W. Massengill, M. P. Baze, B. L. Bhuva, A. F. Witulski, J. D. Black, A. Balasubramanian, M. C. Casey, D. A. Black, J. R. Ahlbin, et al., "Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process", Device and Materials Reliability, IEEE Transactions on, vol. 9, no. 2, pp. 311 -317, june, 2009.
Ramachandran, V., M. J. Gadlage, J. R. Ahlbin, M. L. Alles, R. A. Reed, B. L. Bhuva, L. W. Massengill, J. D. Black, and C. N. Foster, "Application of a novel test system to characterize single-event transients at cryogenic temperatures", Semiconductor Device Research Symposium, 2009. ISDRS '09. International, pp. 1 -2, dec., 2009.
Casey, M. C., S. E. Armstrong, R. Arora, M. P. King, J. R. Ahlbin, S. A. Francis, B. L. Bhuva, D. McMorrow, H. L. Hughes, P. J. McMarr, et al., "Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low Power", Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3262 -3266, dec., 2009.
Ahlbin, J. R., L. W. Massengill, B. L. Bhuva, B. Narasimham, M. J. Gadlage, and P. H. Eaton, "Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits", Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3050 -3056, dec., 2009.
Gadlage, M. J., J. R. Ahlbin, V. Ramachandran, P. Gouker, C. A. Dinkins, B. L. Bhuva, B. Narasimham, R. D. Schrimpf, M. W. McCurdy, M. L. Alles, et al., "Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies", Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3115 -3121, dec., 2009.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, V. Ramachandran, C. A. Dinkins, B. L. Bhuva, R. D. Schrimpf, and R. L. Shuler, "The effect of elevated temperature on digital single event transient pulse widths in a bulk CMOS technology", Reliability Physics Symposium, 2009 IEEE International, pp. 170 -173, april, 2009.
2008
Ahlbin, J. R., J. D. Black, L. W. Massengill, O. A. Amusan, A. Balasubramanian, M. C. Casey, D. A. Black, M. W. McCurdy, R. A. Reed, and B. L. Bhuva, "C-CREST Technique for Combinational Logic SET Testing", Nuclear Science, IEEE Transactions on, vol. 55, no. 6, pp. 3347 -3351, dec., 2008.