University of Southern California

Export 9 results:
2011
Ahlbin, J. R., M. J. Gadlage, N. M. Atkinson, B. Narasimham, B. L. Bhuva, A. F. Witulski, W. T. Holman, P. H. Eaton, and L. W. Massengill, "Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths", Device and Materials Reliability, IEEE Transactions on, vol. 11, no. 3, pp. 401 -406, sept., 2011.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, B. L. Bhuva, L. W. Massengill, and R. D. Schrimpf, "Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures", Device and Materials Reliability, IEEE Transactions on, vol. 11, no. 1, pp. 179 -186, march, 2011.
2010
Ahlbin, J. R., M. J. Gadlage, N. M. Atkinson, B. L. Bhuva, A. F. Witulski, W. T. Holman, L. W. Massengill, P. H. Eaton, and B. Narasimham, "Effect of multiple-transistor charge collection on SET pulse widths", Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 198 -202, may, 2010.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, V. Ramachandran, C. A. Dinkins, N. D. Pate, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, R. L. Shuler, et al., "Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures", Device and Materials Reliability, IEEE Transactions on, vol. 10, no. 1, pp. 157 -163, march, 2010.
Jagannathan, S., M. J. Gadlage, B. L. Bhuva, R. D. Schrimpf, B. Narasimham, J. Chetia, J. R. Ahlbin, and L. W. Massengill, "Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS", Nuclear Science, IEEE Transactions on, vol. 57, no. 6, pp. 3386 -3391, dec., 2010.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, B. L. Bhuva, L. W. Massengill, R. A. Reed, R. D. Schrimpf, and G. Vizkelethy, "Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes", Nuclear Science, IEEE Transactions on, vol. 57, no. 6, pp. 3336 -3341, dec., 2010.
2009
Ahlbin, J. R., L. W. Massengill, B. L. Bhuva, B. Narasimham, M. J. Gadlage, and P. H. Eaton, "Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits", Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3050 -3056, dec., 2009.
Gadlage, M. J., J. R. Ahlbin, V. Ramachandran, P. Gouker, C. A. Dinkins, B. L. Bhuva, B. Narasimham, R. D. Schrimpf, M. W. McCurdy, M. L. Alles, et al., "Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies", Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3115 -3121, dec., 2009.
Gadlage, M. J., J. R. Ahlbin, B. Narasimham, V. Ramachandran, C. A. Dinkins, B. L. Bhuva, R. D. Schrimpf, and R. L. Shuler, "The effect of elevated temperature on digital single event transient pulse widths in a bulk CMOS technology", Reliability Physics Symposium, 2009 IEEE International, pp. 170 -173, april, 2009.