University of Southern California

Export 11 results:
2011
Gaspard, N. J., J. R. Ahlbin, P. M. Gouker, N. M. Atkinson, M. J. Gadlage, A. F. Witulski, W. T. Holman, B. L. Bhuva, E. X. Zhang, and L. W. Massengill, "Characterization of Single-Event Transients Of Body-Tied vs. floating-body circuits in 150 nm 3D SOI", Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on, pp. 252 -255, sept., 2011.
Ahlbin, J. R., M. J. Gadlage, N. M. Atkinson, B. Narasimham, B. L. Bhuva, A. F. Witulski, W. T. Holman, P. H. Eaton, and L. W. Massengill, "Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths", Device and Materials Reliability, IEEE Transactions on, vol. 11, no. 3, pp. 401 -406, sept., 2011.
Atkinson, N. M., A. F. Witulski, W. T. Holman, J. R. Ahlbin, B. L. Bhuva, and L. W. Massengill, "Layout Technique for Single-Event Transient Mitigation via Pulse Quenching", Nuclear Science, IEEE Transactions on, vol. 58, no. 3, pp. 885 -890, june, 2011.
Atkinson, N. M., J. R. Ahlbin, A. F. Witulski, N. J. Gaspard, W. T. Holman, B. L. Bhuva, E. X. Zhang, L. Chen, and L. W. Massengill, "Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2578 -2584, dec., 2011.
Gaspard, N. J., A. F. Witulski, N. M. Atkinson, J. R. Ahlbin, W. T. Holman, B. L. Bhuva, T. D. Loveless, and L. W. Massengill, "Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOS", Nuclear Science, IEEE Transactions on, vol. 58, no. 6, pp. 2614 -2620, dec., 2011.
Ahlbin, J. R., T. D. Loveless, D. R. Ball, B. L. Bhuva, A. F. Witulski, L. W. Massengill, and M. J. Gadlage, "Double-pulse-single-event transients in combinational logic", Reliability Physics Symposium (IRPS), 2011 IEEE International, pp. 3C.5.1 -3C.5.6, april, 2011.
2010
Ahlbin, J. R., M. J. Gadlage, N. M. Atkinson, B. L. Bhuva, A. F. Witulski, W. T. Holman, L. W. Massengill, P. H. Eaton, and B. Narasimham, "Effect of multiple-transistor charge collection on SET pulse widths", Reliability Physics Symposium (IRPS), 2010 IEEE International, pp. 198 -202, may, 2010.
2009
Amusan, O. A., L. W. Massengill, M. P. Baze, B. L. Bhuva, A. F. Witulski, J. D. Black, A. Balasubramanian, M. C. Casey, D. A. Black, J. R. Ahlbin, et al., "Mitigation Techniques for Single-Event-Induced Charge Sharing in a 90-nm Bulk CMOS Process", Device and Materials Reliability, IEEE Transactions on, vol. 9, no. 2, pp. 311 -317, june, 2009.
2008
Amusan, O. A., L. W. Massengill, M. P. Baze, B. L. Bhuva, A. F. Witulski, J. D. Black, A. Balasubramanian, M. C. Casey, D. A. Black, J. R. Ahlbin, et al., "Mitigation techniques for single event induced charge sharing in a 90 nm bulk CMOS process", Reliability Physics Symposium, 2008. IRPS 2008. IEEE International, pp. 468 -472, 27 2008-may 1.
2007
Amusan, O. A., L. W. Massengill, B. L. Bhuva, S. Dasgupta, A. F. Witulski, and J. R. Ahlbin, "Design Techniques to Reduce SET Pulse Widths in Deep-Submicron Combinational Logic", Nuclear Science, IEEE Transactions on, vol. 54, no. 6, pp. 2060 -2064, dec., 2007.
Dasgupta, S., A. F. Witulski, B. L. Bhuva, M. L. Alles, R. A. Reed, O. A. Amusan, J. R. Ahlbin, R. D. Schrimpf, and L. W. Massengill, "Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS", Nuclear Science, IEEE Transactions on, vol. 54, no. 6, pp. 2407 -2412, dec., 2007.