Export 3 results:
"Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures",
Device and Materials Reliability, IEEE Transactions on, vol. 10, no. 1, pp. 157 -163, march, 2010.
"Effect of Total Ionizing Dose on a Bulk 130 nm Ring Oscillator Operating at Ultra-Low Power",
Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3262 -3266, dec., 2009.
"Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies",
Nuclear Science, IEEE Transactions on, vol. 56, no. 6, pp. 3115 -3121, dec., 2009.