Abstract

One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plural ity of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.

Date

2022

Authors

AP Jacob, Y Bian, S Shank

Inventors

Ajey Poovannummoottil Jacob, Yusheng Bian, Steven Shank

Patent_office

US

Patent_number

11374143

Application_number

16740664