Abstract

N-doped anode region, a P-doped cathode region and at least one P-doped charge region positioned laterally between the N-doped anode region and the P-doped cathode region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and an N-doped impact ionization region positioned laterally between the N-doped anode region and the at least one P-doped charge region.

Date

2022

Authors

AP Jacob, Y Bian

Inventors

Ajey Poovannummoottil Jacob, Yusheng Bian

Patent_office

US

Patent_number

11309447

Application_number

16727321