Abstract

The present disclosure relates to a structure including a non-fixed read-cell circuit configured to switch from a first state to a second state based on a state of a memory cell to generate a sensing margin.

Date

2021

Authors

A Agrawal, AP Jacob, BC Paul

Inventors

Amogh Agrawal, Ajey Poovannummoottil Jacob, Bipul C Paul

Patent_office

US

Patent_number

11087814

Application_number

16508940