Abstract

One illustrative photodiode disclosed herein includes an N-doped anode region, an N-doped impact ionization region positioned above the N-doped anode region and at least one P-doped charge region positioned above the N-doped impact ionization region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and a P-doped cathode region positioned above the at least one P-doped charge region.

Date

2021

Authors

AP Jacob, Y Bian

Inventors

Ajey Poovannummoottil Jacob, Yusheng Bian

Patent_office

US

Application_number

16729930