Abstract

Structures for a grating coupler and methods of fabricating a structure for a grating coupler. A silicide layer is formed on a patterned section of a semiconductor layer. The grating structures of a grating coupler are formed over the silicide layer and the section of the semiconductor layer.

Date

2021

Authors

Y Bian, AP Jacob

Inventors

Yusheng Bian, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

10921526

Application_number

16515779