Abstract

The present disclosure generally relates to semiconductor detectors for use in optoelectronic devices and integrated circuit (IC) chips, and methods for forming same. More particularly, the present disclosure relates to integration of semiconductor detectors with Bragg reflectors. The photodetector of the present disclosure includes a substrate, a Bragg reflector disposed on the substrate, and a semiconductor detector disposed on the Bragg reflector. The Bragg reflector includes alternating layers of a semiconductor material and a dielectric material.

Date

2020

Authors

AP Jacob, TJ Letavic, A Thomas, Y Bian

Inventors

Ajey Poovannummoottil Jacob, Theodore J Letavic, Abu Thomas, Yusheng Bian

Patent_office

US

Patent_number

10818807

Application_number

16253191