Abstract

The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with structured cladding and methods of manufacture. A structure includes: a grating coupler in a dielectric material; a back end of line (BEOL) multilayer stack over the dielectric material; and a multi-layered cladding structure of alternating materials directly on the BEOL multilayer stack.

Date

2020

Authors

AP Jacob, Y Bian

Inventors

Ajey Poovannummoottil Jacob, Yusheng Bian

Patent_office

US

Patent_number

10746907

Application_number

15945347