Publications

Vertical nanowires formed on upper fin surface

Abstract

One illustrative device includes, among other things, at least one fin defined in a semiconductor substrate and a substantially vertical nanowire having an oval-shaped cross-section disposed on a top surface of the at least one fin.

Date
2020
Authors
S Bentley, RA Farrell, G Schmid, AP Jacob
Inventors
Steven Bentley, Richard A Farrell, Gerard Schmid, Ajey Poovannummoottil Jacob
Patent_office
US
Patent_number
10685847
Application_number
15598905