Publications

Resistive nonvolatile memory cells with shared access transistors

Abstract

A device is disclosed including a first resistive storage element, a first access transistor having a first terminal coupled to the first resistive storage element at a first node, a second resistive storage element, a second access transistor having a first terminal coupled to the second resistive storage element at a second node, and a write assist tran sistor having a first terminal coupled to the first node and a second terminal coupled to the second node.

Date
2020
Authors
AP Jacob, A Agrawal, BC Paul
Inventors
Ajey Poovannummoottil Jacob, Amogh Agrawal, Bipul C Paul
Patent_office
US
Patent_number
10665281
Application_number
16286942