Abstract

In an aspect of the disclosure, a grating coupler structure comprises: a polysilicon material with a first grating coupling pattern; a SiN material with second grating coupling pattern; a dielectric material covering the polysilicon material and the SiN material; and a back end of line (BEOL) multilayer stack over the dielectric material. In an aspect of the disclosure, a grating coupler structure comprises: a semiconductor material; a polysilicon material embedded in dielectric material over the semiconductor material and having a first grating coupler pattern; a SiN material embedded in the dielectric material and located over the polysilicon material, the SiN material having a second grating coupler pattern which directs light through the first gating coupler pattern of the polysilicon material; and a back end of line (BEOL) multilayer stack over the dielectric material.
In an aspect of the disclosure, a method comprises: forming a …

Date

2020

Authors

AP Jacob, Y Bian

Inventors

Ajey Poovannummoottil Jacob, Yusheng Bian

Patent_office

US

Patent_number

10585219

Application_number

16000249