Abstract

(57) ABSTRACT A magneto-resistive memory (MRM) structure includes a source line and a first transistor that includes a source region and a drain region. The source line is electrically connected to the source region of the first transistor. The MRM structure further includes an MRM cell that includes an

Date

2019

Authors

A Jaiswal, AP Jacob, BC Paul, W Taylor, DPC Shum

Inventors

Akhilesh Jaiswal, Ajey P Jacob, Bipul C Paul, William Taylor, Danny Pak-Chum Shum

Patent_office

US

Patent_number

10515679

Application_number

15889369