Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to light emitting diode (LED) structures and methods of manufacture. The method includes: forming a buffer layer on a substrate, the buffer layer having at least a lattice mismatch with the substrate; and relaxing the buffer layer by pixelating the buffer layer into discrete islands, prior to formation of a quantum well.(52)

Date

2019

Authors

DK Nayak, SR Banna, AP Jacob

Inventors

Deepak K Nayak, Srinivasa R Banna, Ajey P Jacob

Patent_office

US

Patent_number

10217900

Application_number

15643061