Abstract

(57) ABSTRACT A method includes forming a first directed self-assembly material above a substrate. The substrate is patterned using the first directed self-assembly material to define at least one fin in the semiconductor substrate. A second directed self assembly material is formed above the at least one fin to expose a top surface of the at least one fin. A substantially vertical nanowire is formed on the top surface of the at least one fin. At least a first dimension of the vertical nanowire is defined by an intrinsic pitch of the first directed self assembly material and a second dimension of the vertical nanowire is defined by an intrinsic pitch of the second directed self-assembly material.

Date

2019

Authors

S Bentley, RA Farrell, G Schmid, AP Jacob

Inventors

Steven Bentley, Richard A Farrell, Gerard Schmid, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

10186577

Application_number

14477096