Abstract

One illustrative method disclosed herein includes, among other things, forming a sacrificial mandrel structure above a semiconductor substrate comprising a first semiconductor material and forming a plurality of vertically-oriented chan nel semiconductor (VOCS) structures on at least opposing lateral sidewall surfaces of the sacrificial mandrel structure, the VOCS structures comprising a second semiconductor material that is different than the first semiconductor mate rial. In this example, the method also includes selectively removing the sacrificial mandrel structure relative to the VOCS structures and forming upper and lower source/drain regions in each of the VOCS structures and a gate structure around each of the VOCS structures.

Date

2018

Authors

AP Jacob

Inventors

Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

10090385

Application_number

15475946