Abstract

A device includes an NMOS FinFET device including a first fin. The first fin includes a first strain relaxed buffer layer doped with carbon and a first channel semiconductor mate rial formed above the carbon-doped strain relaxed buffer layer. A PMOS FinFET device includes a second fin. The second fin includes a second strain relaxed buffer layer and a second channel semiconductor material formed above the carbon-doped strain relaxed buffer layer. A first gate struc ture is positioned around a portion of the NMOS fin. A second gate structure is positioned around a portion of the PMOS fin.

Date

2018

Authors

AP Jacob

Inventors

Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

10056300

Application_number

15729051