Publications
Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices
Abstract
(54) METHODS OF FORMING FIN ISOLATION REGIONS UNDER TENSILE-STRAINED FINS ON FINFET SEMICONDUCTOR DEVICES
- Date
- 2018
- Authors
- AP Jacob, MK Akarvardar, JA Fronheiser
- Inventors
- Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Jody A Fronheiser
- Patent_office
- US
- Patent_number
- 10026659
- Application_number
- 14608815