Abstract

Commonly fabricated FinFET type semiconductor devices with different (i. e., both taller and shorter) heights of an entirety of or only the channel region of some of the fins. Where only the channel of some of the fins has a different height, the sources and drains have a common height higher than those channels. The different fin heights are created by recessing some of the fins, and where only the channels have different heights, the difference is created by exposing a top surface of each channel intended to be shorter, the other channels being masked, and partially recessing the exposed channel (s). In both cases, the mask (s) may then be removed and conventional FinFET processing may proceed.

Date

2018

Authors

MK Akarvardar, JA Fronheiser, AP Jacob

Inventors

Murat Kerem Akarvardar, Jody A Fronheiser, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9960257

Application_number

14656671