Abstract

(57) ABSTRACT A method includes forming at least one fin on a semicon ductor substrate. A nanowire material is formed above the fin. A hard mask layer is formed above the fin. A first directed self-assembly material is formed above the hard mask layer. The hard mask layer is patterned using a portion of the first directed self-assembly material as an etch mask to expose a portion of the nanowire material. The nanowire material is etched using the hard mask layer as an etch mask to define a substantially vertical nanowire on a top surface of the at least one fin, wherein at least one dimension of the substantially vertical nanowire is defined by an intrinsic pitch of the first directed self-assembly material. 19 Claims, 17 Drawing Sheets

Date

January 9, 2018

Authors

S Bentley, RA Farrell, G Schmid, AP Jacob

Inventors

Steven Bentley, Richard A Farrell, Gerard Schmid, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9865682

Application_number

14476918