Abstract

One method disclosed includes forming first, second and third fins for a first NMOS device, a PMOS device and a second NMOS device, respectively. According to this method, the first fin consists entirely of the substrate mate rial, the second and third fins comprise a lower substrate fin portion made of the substrate material and an upper fin portion made of a second semiconductor material and a third semiconductor material, respectively, wherein the second semiconductor material and the third semiconductor mate rial are each different from the substrate material. The method also includes forming a semiconductor material cladding on the exposed upper portion of the third fin for the second NMOS FinFET device. 24 Claims, 14 Drawing Sheets

Date

2017

Authors

AP Jacob

Inventors

Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9748387

Application_number

14940655