Abstract

A method includes forming at least one fin on a semiconductor substrate. A hard mask layer is formed above the fin. A first directed self-assembly material is formed above the hard mask layer. The hard mask layer is patterned using a portion of the first directed self-assembly material as an etch mask to expose a portion of the top surface of the fin. A substantially vertical nanowire is formed on the exposed top surface. At least one dimension of the substantially vertical nanowire is defined by an intrinsic pitch of the first directed self-assembly material.

Date

July 4, 2017

Authors

S Bentley, RA Farrell, G Schmid, AP Jacob

Inventors

Steven Bentley, Richard A Farrell, Gerard Schmid, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9698025

Application_number

14476879