Abstract

Methods and semiconductor structures formed from the methods are provided which facilitate fabricating semicon ductor fin structures. The methods include, for example: providing a wafer with at least one semiconductor fin extending above a substrate; transforming a portion of the semiconductor fin (s) into an isolation layer, the isolation layer separating a semiconductor layer of the semiconductor finCS) from the Substrate; and proceeding with forming a fin device (s) of a first architectural type in a first fin region of the semiconductor fin?(s), and a fin device (s) of a second architectural type in a second fin region of the semiconduc tor finCs), where the first architectural type and the second architectural type are different fin device architectures.

Date

June 6, 2017

Authors

AP Jacob, K Cheng, B Doris, N Loubet, P Khare, R Divakaruni

Inventors

Ajey Poovannummoottil Jacob, Kangguo Cheng, Bruce Doris, Nicolas Loubet, Prasanna Khare, Rama Divakaruni

Patent_office

US

Patent_number

9673222

Application_number

15156506