Publications
Methods of forming fin isolation regions on FinFET semiconductor devices by implantation of an oxidation-retarding material
Abstract
METHODS OF FORMING FIN SOLATION REGIONS ON FINFET SEMCONDUCTOR DEVICES BY MPLANTATION OF AN OXDATION-RETARDING MATERIAL
- Date
- 2017
- Authors
- AP Jacob, B Doris, K Cheng, A Khakifirooz, K Rim
- Inventors
- Ajey Poovannummoottil Jacob, Bruce Doris, Kangguo Cheng, Ali Khakifirooz, Kern Rim
- Patent_office
- US
- Patent_number
- 9673083
- Application_number
- 14608729