Abstract

(57) ABSTRACT A method includes forming a fin on a semiconductor Sub strate. An isolation structure is formed adjacent the fin. A silicon alloy material is formed on a portion of the fin extending above the isolation structure. A thermal process is performed to define a silicon alloy fin portion from the silicon alloy material and the fin and to define a first insulating layer separating the fin from the Substrate.

Date

April 25, 2017

Authors

AP Jacob

Inventors

Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9634123

Application_number

14676909