Abstract

One illustrative method disclosed herein includes, among other things, forming a plurality of initial fins that have the same initial axial length and the same initial strain above a Substrate, performing at least one etching process so as to cut a first fin to a first axial length and to cut a second fin to a second axial length that is less than the first axial length, wherein the cut first fin retains a first amount of the initial strain and the cut second fin retains about Zero of the initial strain or a second amount of the initial strain that is less than the first amount, and forming gate structures around the first and second cut fins to form FinFET devices.

Date

2017

Authors

AP Jacob, MK Akarvardar, B Doris, A Khakifirooz

Inventors

Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Bruce Doris, Ali Khakifirooz

Patent_office

US

Patent_number

9589849

Application_number

14633353