Abstract

One illustrative method disclosed herein includes, among other things, forming a sacrificial fin structure above a semiconductor Substrate, forming a layer of insulating mate rial around the sacrificial fin structure, removing the sacri ficial fin structure so as to define a replacement fin cavity in the layer of insulating material that exposes an upper Surface of the Substrate, forming a replacement fin in the replace ment fin cavity on the exposed upper Surface of the Sub strate, recessing the layer of insulating material, and forming a gate structure around at least a portion of the replacement fin exposed above the recessed layer of insulating material.

Date

2017

Authors

MK Akarvardar, AP Jacob

Inventors

Murat Kerem Akarvardar, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9590040

Application_number

14341000