Abstract

(57) ABSTRACT A method of forming a semiconductor structure includes forming a first isolation region between fins of a first group of fins and between fins of a second group of fins. The first a second group of fins are formed in a bulk semiconductor Substrate. A second isolation region is formed between the first group of fins and the second group of fins, the second isolation region extends through a portion of the first isola tion region Such that the first and second isolation regions are in direct contact and a height above the bulk semicon ductor Substrate of the second isolation region is greater than a height above the bulk semiconductor substrate of the first isolation region.

Date

2017

Authors

MK Akarvardar, SJ Bentley, K Cheng, BB Doris, J Fronheiser, AP Jacob, ...

Inventors

Murat Kerem Akarvardar, Steven John Bentley, Kangguo Cheng, Bruce B Doris, Jody Fronheiser, Ajey Poovannummoottil Jacob, Ali Khakifirooz, Toshiharu Nagumo

Patent_office

US

Patent_number

9564486

Application_number

14839378