Abstract

One illustrative method disclosed herein includes, among other things, forming a region of a sacrificial material in a semiconductor Substrate at a location where the portion of the fin to be removed will be located, after forming the region of sacrificial material, performing at least one first etching process to form a plurality offin-formation trenches that define the fin, wherein at least a portion of the fin is comprised of the sacrificial material, and performing at least one second etching process to selectively remove Substan tially all of the sacrificial material portion of the fin relative to the substrate.

Date

2016

Authors

Y Qi, AP Jacob

Inventors

Yi Qi, Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9524908

Application_number

14242529