Abstract

A semiconductor device includes a first gate electrode defined on a base layer. A first plurality of layers is disposed on a first sidewall of the first gate electrode. The first plurality of layers includes a first dielectric layer formed on the first sidewall, a first ballistic conductor layer formed above the first dielectric layer, an intermediate layer formed above the first ballistic conductor layer, a second ballistic conductor layer formed above the intermediate layer, and a second dielectric layer formed above the second ballistic conductor layer. A second gate electrode contacts the second dielectric layer.

Date

2016

Authors

AP Jacob

Inventors

Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9484428

Application_number

14608288