Publications

Finfet semiconductor devices with stressed channel regions

Abstract

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, eg PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor

Date
2016
Authors
X Cai, R Xie, K Cheng, A Khakifirooz, AP Jacob, WP Maszara
Inventors
Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ali Khakifirooz, Ajey P Jacob, Witold P Maszara
Patent_office
US
Application_number
15186632