Publications
Finfet semiconductor devices with stressed channel regions
Abstract
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, eg PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- Date
- 2016
- Authors
- X Cai, R Xie, K Cheng, A Khakifirooz, AP Jacob, WP Maszara
- Inventors
- Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ali Khakifirooz, Ajey P Jacob, Witold P Maszara
- Patent_office
- US
- Application_number
- 15186632