Abstract

One illustrative method disclosed herein includes, among other things, forming a first fin for the PMOS device and a second fin for the NMOS device, wherein each of the first and second fins comprises a lower Substrate fin portion and an upper fin portion that is made of semiconductor material that is different from that of the substrate, performing at least one process operation to form a first channel semiconductor material for the PMOS FinFET device that comprises a fully-strained, substantially defect-free substantially pure germanium material on a recessed upper Surface of the upper fin portion of the first fin and form a second channel

Date

September 27, 2016

Authors

AP Jacob

Inventors

Ajey Poovannummoottil Jacob

Patent_office

US

Patent_number

9455199

Application_number

15044219